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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | AS4C64M8D3L-12BIN | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (8x10.5) | 1.283V ~ 1.45V | -40°C ~ 95°C (TA) | Access Time: 20 ns Clock Frequency: 800 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 78-VFBGA Qualification: N/A Technology: SDRAM - DDR3 Write Cycle Time Word Page: N/A | 744 | ||
 | AS4C64M8D3L-12BINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (8x10.5) | 1.283V ~ 1.45V | -40°C ~ 95°C (TA) | Access Time: 20 ns Clock Frequency: 800 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 78-VFBGA Qualification: N/A Technology: SDRAM - DDR3 Write Cycle Time Word Page: N/A | 608 | ||
 | N/A | AS4C64M8SA-7TCN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 479 | |
 | N/A | AS4C64M8SA-7TCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 968 | |
 | N/A | AS4C64M8SC-7TIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 17 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 223 | |
 | N/A | AS4C64M8SC-7TINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 17 ns Clock Frequency: 133 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 967 | |
 | N/A | AS4C64M8SD-7TCN | Alliance Memory, Inc. | IC DRAM 512MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 551 | |
 | N/A | AS4C64M8SD-7TCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 133 MHz Grade: Commercial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 64M x 8 Memory Size: 512 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 1,317 | |
 | N/A | AS4C8M16D1-5BCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 441 | |
 | N/A | AS4C8M16D1-5BCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 638 | |
 | N/A | AS4C8M16D1-5BIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 358 | |
 | N/A | AS4C8M16D1-5BINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 60-TFBGA Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 970 | |
 | AS4C8M16D1-5TCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,162 | ||
 | AS4C8M16D1-5TCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,230 | ||
 | AS4C8M16D1-5TIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 456 | ||
 | AS4C8M16D1-5TINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,113 | ||
 | N/A | AS4C8M16D1A-5TCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 421 | |
 | N/A | AS4C8M16D1A-5TCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,263 | |
 | N/A | AS4C8M16D1A-5TIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 607 | |
 | N/A | AS4C8M16D1A-5TINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Access Time: 700 ps Clock Frequency: 200 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 66-TSSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM - DDR Write Cycle Time Word Page: 15 ns | 1,203 |
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