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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | N/A | AS4C8M16S-6BIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 2 ns | 320 | |
 | N/A | AS4C8M16S-6BINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 2 ns | 530 | |
 | N/A | AS4C8M16S-6TAN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 2 ns | 271 | |
 | N/A | AS4C8M16S-6TANTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 2 ns | 1,278 | |
 | N/A | AS4C8M16S-6TCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 2 ns | 762 | |
 | N/A | AS4C8M16S-6TCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 2 ns | 1,664 | |
 | N/A | AS4C8M16S-6TIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 2 ns | 262 | |
 | N/A | AS4C8M16S-6TINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 2 ns | 4 | |
 | N/A | AS4C8M16S-7BCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 2 ns | 1,580 | |
 | N/A | AS4C8M16S-7BCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 2 ns | 1,216 | |
 | N/A | AS4C8M16S-7TCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 2 ns | 777 | |
 | N/A | AS4C8M16S-7TCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 2 ns | 132 | |
 | AS4C8M16SA-6BAN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 496 | ||
 | AS4C8M16SA-6BANTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 9 | ||
 | AS4C8M16SA-6BIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,462 | ||
 | AS4C8M16SA-6BINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 548 | ||
 | AS4C8M16SA-6TAN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 400 | ||
 | AS4C8M16SA-6TANTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: AEC-Q100 Technology: SDRAM Write Cycle Time Word Page: 12 ns | 828 | ||
 | AS4C8M16SA-6TCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 293 | ||
 | AS4C8M16SA-6TCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 519 |
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