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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | AS4C8M16SA-6TIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 491 | ||
 | AS4C8M16SA-6TINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 1,107 | ||
 | AS4C8M16SA-7BCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 342 | ||
 | AS4C8M16SA-7BCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 1,063 | ||
 | AS4C8M16SA-7TCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 806 | ||
 | AS4C8M16SA-7TCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 14 ns | 1,254 | ||
 | N/A | AS4C8M16SB-6TIN | Alliance Memory, Inc. | IC DRAM 128MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 792 | |
 | N/A | AS4C8M16SB-6TINTR | Alliance Memory, Inc. | IC DRAM 128MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: LVTTL Memory Organization: 8M x 16 Memory Size: 128 Mbit Memory Type: Volatile Packaging: 54-TSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 12 ns | 530 | |
 | N/A | AS4C8M32MSB-6BIN | Alliance Memory, Inc. | IC DRAM 256MBIT PARALLEL 90FBGA | DRAM Memory | 90-FBGA (8x13) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 1,292 | |
 | N/A | AS4C8M32MSB-6BINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PARALLEL 90FBGA | DRAM Memory | 90-FBGA (8x13) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 90-VFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 15 ns | 589 | |
 | N/A | AS4C8M32S-6TIN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,914 | |
 | N/A | AS4C8M32S-6TINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5.5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 621 | |
 | N/A | AS4C8M32S-7TCN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 1,372 | |
 | N/A | AS4C8M32S-7TCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.5 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 86-TFSOP (0.400", 10.16mm Width) Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: N/A | 781 | |
 | N/A | AS4C8M32SA-6BIN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 2 ns | 610 | |
 | N/A | AS4C8M32SA-6BINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: 5 ns Clock Frequency: 166 MHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 2 ns | 1,148 | |
 | N/A | AS4C8M32SA-7BCN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 2 ns | 155 | |
 | N/A | AS4C8M32SA-7BCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: 5.4 ns Clock Frequency: 143 MHz Grade: Commercial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 8M x 32 Memory Size: 256 Mbit Memory Type: Volatile Packaging: 90-TFBGA Qualification: N/A Technology: SDRAM Write Cycle Time Word Page: 2 ns | 324 | |
 | B3221PM3BDGUI-U | Kingston Technology | IC DRAM 32GBIT PAR 200FBGA | DRAM Memory | 200-FBGA (10x14.5) | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -25°C ~ 85°C (TC) | Access Time: 3.5 ns Clock Frequency: 1.866 GHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2G x 16 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-WFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: 18 ns | 654 | ||
 | B3221PM3BDGVIW-U | Kingston Technology | 32GB 200 BALL LPDDR4 4266MH | DRAM Memory | 200-FBGA (10x14.5) | 1.06V ~ 1.17V, 1.7V ~ 1.95V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 2G x 16 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-WFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: 18 ns | 1,139 |
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