| N/A | | M53D256328A-5BG2F | ESMT | 256Mb LPDDR SDRAM | DRAM Memory | 144-FBGA (12x12) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 32 Memory Interface: Parallel Packaging: 144-UFBGA, FCBGA | 197 | |
| N/A | | M53D256328A-6BG2F | ESMT | 256Mb LPDDR SDRAM | DRAM Memory | 144-FBGA (12x12) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 32 Memory Interface: Parallel Packaging: 144-UFBGA, FCBGA | 887 | |
| N/A | | M53D256328A-7.5BG2F | ESMT | 256Mb LPDDR SDRAM | DRAM Memory | 144-FBGA (12x12) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 32 Memory Interface: Parallel Packaging: 144-UFBGA, FCBGA | 1,413 | |
| N/A | | M53D5121632A-5BG | ESMT | 512Mb LPDDR SDRAM | DRAM Memory | 60-BGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 262 | |
| N/A | | M53D5121632A-6BG | ESMT | 512Mb LPDDR SDRAM | DRAM Memory | 60-BGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 1,484 | |
| N/A | | M53D5121632A-7.5BG | ESMT | 512Mb LPDDR SDRAM | DRAM Memory | 60-BGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 631 | |
| N/A | | M53D5123216A-5BG | ESMT | 512Mb LPDDR SDRAM | DRAM Memory | 144-FBGA (12x12) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 32 Memory Interface: Parallel Packaging: 144-UFBGA, FCBGA | 358 | |
| N/A | | M53D5123216A-6BG | ESMT | 512Mb LPDDR SDRAM | DRAM Memory | 144-FBGA (12x12) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 32 Memory Interface: Parallel Packaging: 144-UFBGA, FCBGA | 544 | |
| N/A | | M53D5123216A-7.5BG | ESMT | 512Mb LPDDR SDRAM | DRAM Memory | 144-FBGA (12x12) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 32 Memory Interface: Parallel Packaging: 144-UFBGA, FCBGA | 1,518 | |
| N/A | | M53D64164A-4.5BG2C | ESMT | 64Mb LPDDR SDRAM | DRAM Memory | 60-BGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 322 | |
| N/A | | M53D64164A-5BG2C | ESMT | 64Mb LPDDR SDRAM | DRAM Memory | 60-BGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 441 | |
| N/A | | M54D1G1664A | ESMT | 1Gb LPDDR2 SDRAM | DRAM Memory | 134 BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 16 Memory Interface: Parallel | 291 | |
| N/A | | M54D1G1664A (2G) | ESMT | 1Gb LPDDR2 SDRAM | DRAM Memory | 134 BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 16 Memory Interface: Parallel | 856 | |
| N/A | | M54D1G3232A | ESMT | 1Gb LPDDR2 SDRAM | DRAM Memory | 134 BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 32 Memory Interface: Parallel | 749 | |
| N/A | | M54D1G3232A (2G) | ESMT | 1Gb LPDDR2 SDRAM | DRAM Memory | 134 BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 32 Memory Interface: Parallel | 1,157 | |
| N/A | | M54D2G16128A | ESMT | 2Gb LPDDR2 SDRAM | DRAM Memory | 134 Ball BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 128M x 16 Memory Interface: Parallel | 800 | |
| N/A | | M54D2G3264A | ESMT | 2Gb LPDDR2 SDRAM | DRAM Memory | 134 Ball BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 32 Memory Interface: Parallel | 413 | |
| N/A | N/A | M54D2G3264A (2C) | ESMT | 2Gb LPDDR2 SDRAM Ind. | DRAM Memory | 134 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 32 Memory Interface: Parallel | 318 | |
| N/A | N/A | M54D4G32128ZA(2C) | ESMT | 4Gb LPDDR2 SDRAM Ind. | DRAM Memory | 134 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 128M x 32 Memory Interface: Parallel | 409 | |
| N/A | | M54D5121632A | ESMT | 512Mb LPDDR2 SDRAM | DRAM Memory | 134 Ball BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 16 Memory Interface: Parallel | 349 | |