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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
| N/A | M54D5123216A | ESMT | 512Mb LPDDR2 SDRAM | DRAM Memory | 134 Ball BGA | 2.5V | -25°C – 85°C | Memory Size: 512 Mbit Clock Frequency: 533 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: LPDDR2 SDRAM Memory Organization: 16M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 134 Ball BGA | 467 | ||
| N/A | M55D1G1664A-CDBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 800 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 64M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 715 | ||
| N/A | M55D1G1664A-CDBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 800 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 64M x 16 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 178-BGA | 1,601 | ||
| N/A | M55D1G1664A-EEBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 933 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 64M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 48 | ||
| N/A | M55D1G1664A-EEBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 933 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 64M x 16 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 178-BGA | 1,701 | ||
| N/A | M55D1G1664A-GFBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 64M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 893 | ||
| N/A | M55D1G1664A-GFBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 64M x 16 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 178-BGA | 520 | ||
| N/A | M55D1G3232A-CDBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 800 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 32M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 18 | ||
| N/A | M55D1G3232A-CDBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 800 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 32M x 32 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 178-BGA | 340 | ||
| N/A | M55D1G3232A-EEBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 933 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 32M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 1,272 | ||
| N/A | M55D1G3232A-EEBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 933 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 32M x 32 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 178-BGA | 863 | ||
| N/A | M55D1G3232A-GFBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 32M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 453 | ||
| N/A | M55D1G3232A-GFBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Memory Size: 1 Gbit Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 32M x 32 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 178-BGA | 155 | ||
| N/A | M55D4G16256A-CDBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 800 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 256M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 75 | ||
| N/A | M55D4G16256A-EEBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 933 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 256M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 345 | ||
| N/A | M55D4G16256A-GFBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 256M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 192 | ||
| N/A | M55D4G32128A (2R) | ESMT | 4Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178 Ball BGA | 1.8V / 1.2V | -40°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM - LPDDR3 Memory Organization: 128M x 32 Memory Interface: LPDDR3 Grade: Industrial Qualification: JEDEC Packaging: 178 Ball BGA | 346 | ||
| N/A | M55D4G32128A-CDBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 800 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 128M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 126 | ||
| N/A | M55D4G32128A-CDBIG2R | ESMT | 4Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 800 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 128M x 32 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 178-BGA | 363 | ||
| N/A | M55D4G32128A-EEBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 933 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 128M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 66 |
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