 | | W25N512GVEIR TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 14 | |
 | | W25N512GVEIT | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 601 | |
 | | W25N512GVEIT TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 78 | |
 | | W25N512GVFIG | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 862 | |
 | | W25N512GVFIG TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,413 | |
 | | W25N512GVFIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 941 | |
 | | W25N512GVFIR TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 580 | |
 | | W25N512GVFIT | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 14 | |
 | | W25N512GVFIT TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 233 | |
 | | W25N512GVPIG | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 830 | |
 | | W25N512GVPIG TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 950 | |
 | | W25N512GVPIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,072 | |
 | | W25N512GVPIR TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 92 | |
 | | W25N512GVPIT | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,184 | |
 | | W25N512GVPIT TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 629 | |
 | | W25N512GWBIR | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 883 | |
 | | W25N512GWBIR TR | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,153 | |
 | | W25N512GWBIT TR | Winbond Electronics | IC FLASH 512MBIT SPI 24TFBGA | Flash Memory | 24-TFBGA (6x8) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,103 | |
 | | W25N512GWEIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,116 | |
 | | W25N512GWEIR TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 681 | |