 | | W25N512GWEIT | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,302 | |
 | | W25N512GWEIT TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (8x6) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 625 | |
 | | W25N512GWFIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,195 | |
 | | W25N512GWFIR TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 186 | |
 | | W25N512GWFIT | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 184 | |
 | | W25N512GWFIT TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 16SOIC | Flash Memory | 16-SOIC | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,633 | |
 | | W25N512GWPIR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 262 | |
 | | W25N512GWPIR TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,072 | |
 | | W25N512GWPIT | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 911 | |
 | | W25N512GWPIT TR | Winbond Electronics | IC FLASH 512MBIT SPI/QUAD 8WSON | Flash Memory | 8-WSON (6x5) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 8-WDFN Exposed Pad Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,379 | |
 | | W25N512GWYIR TR | Winbond Electronics | IC FLASH 512MBIT SPI 48WLCSP | Flash Memory | 48-WLCSP | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 48-UFBGA, WLCSP Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 1,453 | |
 | | W25N512GWYIT TR | Winbond Electronics | IC FLASH 512MBIT SPI 48WLCSP | Flash Memory | 48-WLCSP | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Quad I/O Memory Organization: 64M x 8 Packaging: 48-UFBGA, WLCSP Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 700 μs | 817 | |
 | | W25X64VSFIG | Winbond Electronics | IC FLASH 64MBIT SPI 75MHZ 16SOIC | Flash Memory | 16-SOIC | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Write Cycle Time Word Page: 3 ms | 1,283 | |
 | | W25X64VZEIG | Winbond Electronics | IC FLASH 64MBIT SPI 75MHZ 8WSON | Flash Memory | 8-WSON (8x6) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 8 Packaging: 8-WDFN Exposed Pad Write Cycle Time Word Page: 3 ms | 452 | |
 | | W35T25NWSFIE | Winbond Electronics | OCTAL FLASH, 1.8V, 256M-BIT | Flash Memory | 16-SOIC | 1.65V ~ 2V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Octal I/O Memory Organization: 32M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 1.5 ms | 602 | |
 | | W35T25NWSFIE TR | Winbond Electronics | OCTAL FLASH, 1.8V, 256M-BIT | Flash Memory | 16-SOIC | 1.65V ~ 2V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Octal I/O Memory Organization: 32M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 1.5 ms | 1,168 | |
 | | W35T25NWSFIF | Winbond Electronics | OCTAL FLASH, 1.8V, 256M-BIT | Flash Memory | 16-SOIC | 1.65V ~ 2V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Octal I/O Memory Organization: 32M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 1.5 ms | 1,506 | |
 | | W35T25NWSFIF TR | Winbond Electronics | OCTAL FLASH, 1.8V, 256M-BIT | Flash Memory | 16-SOIC | 1.65V ~ 2V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Octal I/O Memory Organization: 32M x 8 Packaging: 16-SOIC (0.295", 7.50mm Width) Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 1.5 ms | 905 | |
| N/A | | W35T25NWTBIE | Winbond Electronics | OCTAL FLASH, 1.8V, 256M-BIT | Flash Memory | 24-TFBGA (8x6) | 1.65V ~ 2V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Octal I/O Memory Organization: 32M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 1.5 ms | 1,424 | |
| N/A | | W35T25NWTBIF | Winbond Electronics | OCTAL FLASH, 1.8V, 256M-BIT | Flash Memory | 24-TFBGA (8x6) | 1.65V ~ 2V | -40°C ~ 85°C (TA) | Memory Interface: SPI - Octal I/O Memory Organization: 32M x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: 1.5 ms | 538 | |