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Electronic Parts Search

Suntsu Electronics is your reliable source for hard-to-find and obsolete electronic components. Our advanced part search tool makes it easy to quickly find the products you need. You can search by part number, manufacturer, or specifications to instantly access a comprehensive database of electronic components.

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Total Products: 236,805
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
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W74M25JWZEIQ
W74M25JWZEIQWinbond ElectronicsIC FLASH 256MBIT 104MHZ 8WSONFlash Memory8-WSON (8x6)1.7V ~ 1.95V-40°C ~ 85°C
Access Time:
N/A
Clock Frequency:
104 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
N/A
Memory Organization:
32M x 8
Memory Size:
256 Mbit
Memory Type:
Non-Volatile
Packaging:
8-WDFN Exposed Pad
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,347
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W74M25JWZEIQ TR
W74M25JWZEIQ TRWinbond ElectronicsIC FLASH 256MBIT 104MHZ 8WSONFlash Memory8-WSON (8x6)1.7V ~ 1.95V-40°C ~ 85°C
Access Time:
N/A
Clock Frequency:
104 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
N/A
Memory Organization:
32M x 8
Memory Size:
256 Mbit
Memory Type:
Non-Volatile
Packaging:
8-WDFN Exposed Pad
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
604
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QUOTE
W74M25JWZPIQ
W74M25JWZPIQWinbond ElectronicsIC FLASH 256MBIT 104MHZ 8WSONFlash Memory8-WSON (6x5)1.7V ~ 1.95V-40°C ~ 85°C
Access Time:
N/A
Clock Frequency:
104 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
N/A
Memory Organization:
32M x 8
Memory Size:
256 Mbit
Memory Type:
Non-Volatile
Packaging:
8-WDFN Exposed Pad
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,077
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W74M25JWZPIQ TR
W74M25JWZPIQ TRWinbond ElectronicsIC FLASH 256MBIT 104MHZ 8WSONFlash Memory8-WSON (6x5)1.7V ~ 1.95V-40°C ~ 85°C
Access Time:
N/A
Clock Frequency:
104 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
N/A
Memory Organization:
32M x 8
Memory Size:
256 Mbit
Memory Type:
Non-Volatile
Packaging:
8-WDFN Exposed Pad
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,759
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QUOTE
W74M64FVSSIQN/AW74M64FVSSIQWinbond ElectronicsIC FLASH 64MBIT SPI/QUAD 8SOICFlash Memory8-SOIC2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
80 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
SPI - Quad I/O
Memory Organization:
8M x 8
Memory Size:
64 Mbit
Memory Type:
Non-Volatile
Packaging:
8-SOIC (0.209", 5.30mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
470
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W74M64FVSSIQ TRN/AW74M64FVSSIQ TRWinbond ElectronicsIC FLASH 64MBIT SPI/QUAD 8SOICFlash Memory8-SOIC2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
80 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
SPI - Quad I/O
Memory Organization:
8M x 8
Memory Size:
64 Mbit
Memory Type:
Non-Volatile
Packaging:
8-SOIC (0.209", 5.30mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,529
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W74M64JVSSIQN/AW74M64JVSSIQWinbond ElectronicsIC FLASH 64MBIT SPI/QUAD 8SOICFlash Memory8-SOIC2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
104 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
SPI - Quad I/O
Memory Organization:
8M x 8
Memory Size:
64 Mbit
Memory Type:
Non-Volatile
Packaging:
8-SOIC (0.209", 5.30mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,365
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QUOTE
W74M64JVSSIQ TRN/AW74M64JVSSIQ TRWinbond ElectronicsIC FLASH 64MBIT SPI/QUAD 8SOICFlash Memory8-SOIC2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
104 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
SPI - Quad I/O
Memory Organization:
8M x 8
Memory Size:
64 Mbit
Memory Type:
Non-Volatile
Packaging:
8-SOIC (0.209", 5.30mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
609
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QUOTE
W9412G6IH-5
W9412G6IH-5Winbond ElectronicsIC DRAM 128MBIT SSTL2 66TSOP IIDRAM Memory66-TSOP II2.3V ~ 2.7V0°C ~ 70°C (TA)
Access Time:
50 ns
Clock Frequency:
200 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
486
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QUOTE
W9412G6JB-5
W9412G6JB-5Winbond ElectronicsIC DRAM 128MBIT SSTL2 54TFBGADRAM Memory54-TFBGA (8x8)2.7V ~ 2.3V0°C ~ 70°C (TA)
Access Time:
50 ns
Clock Frequency:
200 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
54-TFBGA
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
1,667
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QUOTE
W9412G6JB-5I TR
W9412G6JB-5I TRWinbond ElectronicsIC DRAM 128MBIT SSTL2 54TFBGADRAM Memory54-TFBGA (8x8)2.7V ~ 2.3V-40°C ~ 85°C (TA)
Access Time:
50 ns
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
54-TFBGA
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
1,506
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QUOTE
W9412G6JH-4
W9412G6JH-4Winbond ElectronicsIC DRAM 128MBIT SSTL2 66TSOP IIDRAM Memory66-TSOP II2.4V ~ 2.7V0°C ~ 70°C (TA)
Access Time:
48 ns
Clock Frequency:
250 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
12 ns
287
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QUOTE
W9412G6JH-5I
W9412G6JH-5IWinbond ElectronicsIC DRAM 128MBIT SSTL2 66TSOP IIDRAM Memory66-TSOP II2.3V ~ 2.7V-40°C ~ 85°C (TA)
Access Time:
50 ns
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
1,361
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QUOTE
W9412G6KH-4
W9412G6KH-4Winbond ElectronicsIC DRAM 128MBIT SSTL2 66TSOP IIDRAM Memory66-TSOP II2.4V ~ 2.7V0°C ~ 70°C (TA)
Access Time:
48 ns
Clock Frequency:
250 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
12 ns
1,426
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QUOTE
W9412G6KH-4 TRN/AW9412G6KH-4 TRWinbond ElectronicsIC DRAM 128MBIT SSTL2 66TSOP IIDRAM Memory66-TSOP II2.4V ~ 2.7V0°C ~ 70°C (TA)
Access Time:
48 ns
Clock Frequency:
250 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
12 ns
959
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QUOTE
W9412G6KH-5
W9412G6KH-5Winbond ElectronicsIC DRAM 128MBIT SSTL2 66TSOP IIDRAM Memory66-TSOP II2.3V ~ 2.7V0°C ~ 70°C (TA)
Access Time:
50 ns
Clock Frequency:
200 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
532
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QUOTE
W9412G6KH-5 TR
W9412G6KH-5 TRWinbond ElectronicsIC DRAM 128MBIT SSTL2 66TSOP IIDRAM Memory66-TSOP II2.3V ~ 2.7V0°C ~ 70°C (TA)
Access Time:
50 ns
Clock Frequency:
200 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
481
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QUOTE
W9412G6KH-5I
W9412G6KH-5IWinbond ElectronicsIC DRAM 128MBIT SSTL2 66TSOP IIDRAM Memory66-TSOP II2.3V ~ 2.7V-40°C ~ 85°C (TA)
Access Time:
50 ns
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
309
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QUOTE
W9412G6KH-5I TR
W9412G6KH-5I TRWinbond ElectronicsIC DRAM 128MBIT SSTL2 66TSOP IIDRAM Memory66-TSOP II2.3V ~ 2.7V-40°C ~ 85°C (TA)
Access Time:
50 ns
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
SSTL_2
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
478
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QUOTE
W9425G6EH-5
W9425G6EH-5Winbond ElectronicsIC DRAM 256MBIT PAR 66TSOP IIDRAM Memory66-TSOP II2.3V ~ 2.7V0°C ~ 70°C (TA)
Access Time:
55 ns
Clock Frequency:
250 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
16M x 16
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
66-TSSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM - DDR
Write Cycle Time Word Page:
15 ns
500
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QUOTE

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