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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
| N/A | M12L128168A (2S) | ESMT | 128Mb SDRAM Ind. | DRAM Memory | 54 pin TSOPII/ 54 Ball FBGA | 2.5V | -40°C – 85°C | Memory Size: 128 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 15 ns Access Time: 5 ns Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Organization: 8M x 16 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 54 pin TSOPII/ 54 Ball FBGA | 448 | ||
| N/A | M12L128168A-5BG2S | ESMT | 128Mb SDRAM | DRAM Memory | 54-FBGA | 3.0V ~ 3.6V | 0°C – 70°C | Memory Size: 128 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 10 ns Access Time: 4.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 2M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 54-FBGA | 128 | ||
| N/A | M12L128168A-5TG2S | ESMT | 128Mb SDRAM | DRAM Memory | 54-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Memory Size: 128 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 10 ns Access Time: 4.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 2M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 54-TSOP II | 838 | ||
| N/A | M12L128168A-6BG2S | ESMT | 128Mb SDRAM | DRAM Memory | 54-FBGA | 3.0V ~ 3.6V | 0°C – 70°C | Memory Size: 128 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 12 ns Access Time: 5.4 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 2M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 54-FBGA | 192 | ||
| N/A | M12L128168A-6TG2S | ESMT | 128Mb SDRAM | DRAM Memory | 54-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Memory Size: 128 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 12 ns Access Time: 5.4 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 2M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 54-TSOP II | 108 | ||
| N/A | M12L128168A-7BG2S | ESMT | 128Mb SDRAM | DRAM Memory | 54-FBGA | 3.0V ~ 3.6V | 0°C – 70°C | Memory Size: 128 Mbit Clock Frequency: 143 MHz Write Cycle Time Word Page: 14 ns Access Time: 6 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 2M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 54-FBGA | 664 | ||
| N/A | M12L128168A-7TG2S | ESMT | 128Mb SDRAM | DRAM Memory | 54-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Memory Size: 128 Mbit Clock Frequency: 143 MHz Write Cycle Time Word Page: 14 ns Access Time: 6 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 2M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 54-TSOP II | 706 | ||
| N/A | M12L128324A-5BG2C | ESMT | 128Mb SDRAM | DRAM Memory | 90-FBGA | 3.0V ~ 3.6V | 0°C – 70°C | Memory Size: 128 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 10 ns Access Time: 4.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 1M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 90-FBGA | 1,707 | ||
| N/A | M12L128324A-6BG2C | ESMT | 128Mb SDRAM | DRAM Memory | 90-FBGA | 3.0V ~ 3.6V | 0°C – 70°C | Memory Size: 128 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 12 ns Access Time: 5.4 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 1M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 90-FBGA | 48 | ||
| N/A | M12L128324A-7BG2C | ESMT | 128Mb SDRAM | DRAM Memory | 90-FBGA | 3.0V ~ 3.6V | 0°C – 70°C | Memory Size: 128 Mbit Clock Frequency: 143 MHz Write Cycle Time Word Page: 14 ns Access Time: 6 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 1M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 90-FBGA | 221 | ||
| N/A | M12L16161A-5T(2R) | ESMT | 16Mb SDRAM Ind. | DRAM Memory | 50PIN TSOP | 2.5V | -40°C – 85°C | Memory Size: 16 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 10 ns Access Time: 5 ns Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Organization: 1M x 16 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 50PIN TSOP | 504 | ||
| N/A | M12L16161A-5TG2R | ESMT | 16Mb SDRAM | DRAM Memory | 50-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Memory Size: 16 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 10 ns Access Time: 4.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 512K x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 50-TSOP II | 663 | ||
| N/A | M12L16161A-7T(2R) | ESMT | 16Mb SDRAM Ind. | DRAM Memory | 50PIN TSOP | 2.5V | -40°C – 85°C | Memory Size: 16 Mbit Clock Frequency: 143 MHz Write Cycle Time Word Page: 14 ns Access Time: 5 ns Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Organization: 1M x 16 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 50PIN TSOP | 273 | ||
| N/A | M12L16161A-7TG2R | ESMT | 16Mb SDRAM | DRAM Memory | 50-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Memory Size: 16 Mbit Clock Frequency: 143 MHz Write Cycle Time Word Page: 14 ns Access Time: 6 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 512K x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 50-TSOP II | 1,393 | ||
| N/A | M12L2561616A-5B(2T) | ESMT | 256Mb SDRAM | DRAM Memory | 54 pin TSOPII/ 54 Ball FBGA | 2.5V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 10 ns Access Time: 5 ns Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Organization: 16M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 54 pin TSOPII/ 54 Ball FBGA | 942 | ||
| N/A | M12L2561616A-5BG2T | ESMT | 256Mb SDRAM | DRAM Memory | BGA | 3.0V ~ 3.6V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 10 ns Access Time: 4.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 54-BGA | 75 | ||
| N/A | M12L2561616A-5T(2T) | ESMT | 256Mb SDRAM | DRAM Memory | 54 pin TSOPII/ 54 Ball FBGA | 2.5V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 10 ns Access Time: 5 ns Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Organization: 16M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 54 pin TSOPII/ 54 Ball FBGA | 549 | ||
| N/A | M12L2561616A-5TG2T | ESMT | 256Mb SDRAM | DRAM Memory | TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 10 ns Access Time: 4.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 54-TSOP II | 831 | ||
| N/A | M12L2561616A-6B(2T) | ESMT | 256Mb SDRAM | DRAM Memory | 54 pin TSOPII/ 54 Ball FBGA | 2.5V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 12 ns Access Time: 5 ns Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Organization: 16M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 54 pin TSOPII/ 54 Ball FBGA | 1,270 | ||
| N/A | M12L2561616A-6BG2T | ESMT | 256Mb SDRAM | DRAM Memory | BGA | 3.0V ~ 3.6V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 12 ns Access Time: 5.4 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 54-BGA | 1,746 |
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