| N/A | | M12L64164A-5T(2C) | ESMT | 64Mb SDRAM Ind. | DRAM Memory | 54 TSOPII/ 54 VBGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 10 ns Memory Organization: 4M x 16 Memory Interface: Parallel Packaging: 54 TSOPII/ 54 VBGA | 1,374 | |
| N/A | | M12L64164A-5TG2C | ESMT | 64Mb SDRAM | DRAM Memory | 54-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 1,178 | |
| N/A | | M12L64164A-7B(2C) | ESMT | 64Mb SDRAM Ind. | DRAM Memory | 54 TSOPII/ 54 VBGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 14 ns Memory Organization: 4M x 16 Memory Interface: Parallel Packaging: 54 TSOPII/ 54 VBGA | 845 | |
| N/A | | M12L64164A-7BG2C | ESMT | 64Mb SDRAM | DRAM Memory | 54-VBGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 990 | |
| N/A | | M12L64164A-7T(2C) | ESMT | 64Mb SDRAM Ind. | DRAM Memory | 54 TSOPII/ 54 VBGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 14 ns Memory Organization: 4M x 16 Memory Interface: Parallel Packaging: 54 TSOPII/ 54 VBGA | 113 | |
| N/A | | M12L64164A-7TG2C | ESMT | 64Mb SDRAM | DRAM Memory | 54-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 614 | |
| N/A | | M12L64322A (2S) | ESMT | 64Mb SDRAM Ind. | DRAM Memory | 86 TSOPII/ 90 BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 32 Memory Interface: Parallel Packaging: 86 TSOPII/ 90 BGA | 270 | |
| N/A | | M12L64322A-5BG2S | ESMT | 64Mb SDRAM | DRAM Memory | 90-BGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 1,827 | |
| N/A | | M12L64322A-5TG2S | ESMT | 64Mb SDRAM | DRAM Memory | 86-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 1,217 | |
| N/A | | M12L64322A-6BG2S | ESMT | 64Mb SDRAM | DRAM Memory | 90-BGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 12 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 774 | |
| N/A | | M12L64322A-6TG2S | ESMT | 64Mb SDRAM | DRAM Memory | 86-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 12 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 1,209 | |
| N/A | | M12L64322A-7BG2S | ESMT | 64Mb SDRAM | DRAM Memory | 90-BGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 1,432 | |
| N/A | | M12L64322A-7TG2S | ESMT | 64Mb SDRAM | DRAM Memory | 86-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 218 | |
| N/A | | M13D64322A-4.5BG2S | ESMT | 64Mb LPDDR SDRAM | DRAM Memory | 144-FBGA (12x12) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 512K x 32 Memory Interface: Parallel Packaging: 144-UFBGA, FCBGA | 181 | |
| N/A | | M13D64322A-4BG2S | ESMT | 64Mb LPDDR SDRAM | DRAM Memory | 144-FBGA (12x12) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 512K x 32 Memory Interface: Parallel Packaging: 144-UFBGA, FCBGA | 1,226 | |
| N/A | | M13D64322A-5BG2S | ESMT | 64Mb LPDDR SDRAM | DRAM Memory | 144-FBGA (12x12) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 512K x 32 Memory Interface: Parallel Packaging: 144-UFBGA, FCBGA | 841 | |
| N/A | | M13S128168A-4.5BG2S | ESMT | 128Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 16 Memory Interface: Parallel | 570 | |
| N/A | | M13S128168A-4.5TG2S | ESMT | 128Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 16 Memory Interface: Parallel | 1,023 | |
| N/A | | M13S128168A-4BG2S | ESMT | 128Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 16 Memory Interface: Parallel | 8 | |
| N/A | | M13S128168A-4TG2S | ESMT | 128Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 16 Memory Interface: Parallel | 687 | |