| N/A | | M13S128168A-5BG2S | ESMT | 128Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 16 Memory Interface: Parallel | 1,697 | |
| N/A | | M13S128168A-5TG2S | ESMT | 128Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 16 Memory Interface: Parallel | 246 | |
| N/A | | M13S128168A-6BG2S | ESMT | 128Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 16 Memory Interface: Parallel | 1,159 | |
| N/A | | M13S128168A-6TG2S | ESMT | 128Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 16 Memory Interface: Parallel | 499 | |
| N/A | | M13S128324A-3.6BIG2M | ESMT | 128Mb DDR SDRAM Ind. | DRAM Memory | 144-FBGA | 2.5V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 1M x 32 Memory Interface: Parallel | 783 | |
| N/A | | M13S128324A-4BIG2M | ESMT | 128Mb DDR SDRAM Ind. | DRAM Memory | 144-FBGA | 2.375V ~ 2.625V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 1M x 32 Memory Interface: Parallel | 751 | |
| N/A | | M13S128324A-5BIG2M | ESMT | 128Mb DDR SDRAM Ind. | DRAM Memory | 144-FBGA | 2.375V ~ 2.625V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 1M x 32 Memory Interface: Parallel | 769 | |
| N/A | | M13S128324A-6BIG2M | ESMT | 128Mb DDR SDRAM Ind. | DRAM Memory | 144-FBGA | 2.375V ~ 2.625V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 1M x 32 Memory Interface: Parallel | 280 | |
| N/A | | M13S2561616A-4BG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 1,168 | |
| N/A | | M13S2561616A-4BIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 1,938 | |
| N/A | | M13S2561616A-4TG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 805 | |
| N/A | | M13S2561616A-4TIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 715 | |
| N/A | | M13S2561616A-5BG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 207 | |
| N/A | | M13S2561616A-5BIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 672 | |
| N/A | | M13S2561616A-5TG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 1,317 | |
| N/A | | M13S2561616A-5TIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 765 | |
| N/A | | M13S2561616A-6BG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 1,219 | |
| N/A | | M13S2561616A-6BIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 403 | |
| N/A | | M13S2561616A-6TG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 307 | |
| N/A | | M13S2561616A-6TIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 595 | |