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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
| N/A | M5248P#TF0J | Renesas | IC CURRENT DRIVER DARL 1.5A | Drivers, Receivers, Transceivers | N/A | N/A | N/A | N/A | 307 | ||
| N/A | M5261L#741Y | Renesas | IC LOW SATURATION OUTPUT | Drivers, Receivers, Transceivers | N/A | N/A | N/A | N/A | 323 | ||
 | M52795FP | Renesas | AUDIO/VIDEO SWITCH, 12 CHANNEL | Analog Switches, Multiplexers, Demultiplexers | N/A | N/A | N/A | N/A | 1,237 | ||
| N/A | M52D2561616A-5BG2F | ESMT | 256Mb SDRAM | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 10 ns Access Time: 4.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: LVCMOS Grade: Commercial Qualification: JEDEC Packaging: 54-FBGA | 1,303 | ||
| N/A | M52D2561616A-5BIG2F | ESMT | 256Mb SDRAM Ind. | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | -40°C – 85°C | Memory Size: 256 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 10 ns Access Time: 4.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: LVCMOS Grade: Industrial Qualification: JEDEC Packaging: 54-FBGA | 610 | ||
| N/A | M52D2561616A-6BG2F | ESMT | 256Mb SDRAM | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 12 ns Access Time: 5.4 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: LVCMOS Grade: Commercial Qualification: JEDEC Packaging: 54-FBGA | 1,377 | ||
| N/A | M52D2561616A-6BIG2F | ESMT | 256Mb SDRAM Ind. | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | -40°C – 85°C | Memory Size: 256 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 12 ns Access Time: 5.4 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: LVCMOS Grade: Industrial Qualification: JEDEC Packaging: 54-FBGA | 263 | ||
| N/A | M52D2561616A-7BG2F | ESMT | 256Mb SDRAM | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 143 MHz Write Cycle Time Word Page: 14 ns Access Time: 6 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: LVCMOS Grade: Commercial Qualification: JEDEC Packaging: 54-FBGA | 551 | ||
| N/A | M52D2561616A-7BIG2F | ESMT | 256Mb SDRAM Ind. | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | -40°C – 85°C | Memory Size: 256 Mbit Clock Frequency: 143 MHz Write Cycle Time Word Page: 14 ns Access Time: 6 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: LVCMOS Grade: Industrial Qualification: JEDEC Packaging: 54-FBGA | 1,349 | ||
| N/A | M52D256328A-6BG2F | ESMT | 256Mb SDRAM | DRAM Memory | 90-FBGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 12 ns Access Time: 5.4 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 2M x 32 Memory Interface: LVCMOS Grade: Commercial Qualification: JEDEC Packaging: 90-FBGA | 499 | ||
| N/A | M52D256328A-7BG2F | ESMT | 256Mb SDRAM | DRAM Memory | 90-FBGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 143 MHz Write Cycle Time Word Page: 14 ns Access Time: 6 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 2M x 32 Memory Interface: LVCMOS Grade: Commercial Qualification: JEDEC Packaging: 90-FBGA | 636 | ||
| N/A | M52D5121632A-5BG | ESMT | 512Mb SDRAM | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 512 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 10 ns Access Time: 4.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 8M x 16 Memory Interface: LVCMOS Grade: Commercial Qualification: JEDEC Packaging: 54-FBGA | 1,431 | ||
| N/A | M52D5121632A-5BIG | ESMT | 512Mb SDRAM Ind. | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | -40°C – 85°C | Memory Size: 512 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 10 ns Access Time: 4.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 8M x 16 Memory Interface: LVCMOS Grade: Industrial Qualification: JEDEC Packaging: 54-FBGA | 46 | ||
| N/A | M52D5121632A-6BG | ESMT | 512Mb SDRAM | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 512 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 12 ns Access Time: 5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 8M x 16 Memory Interface: LVCMOS Grade: Commercial Qualification: JEDEC Packaging: 54-FBGA | 1,709 | ||
| N/A | M52D5121632A-6BIG | ESMT | 512Mb SDRAM Ind. | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | -40°C – 85°C | Memory Size: 512 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 12 ns Access Time: 5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 8M x 16 Memory Interface: LVCMOS Grade: Industrial Qualification: JEDEC Packaging: 54-FBGA | 120 | ||
| N/A | M52D5121632A-7BG | ESMT | 512Mb SDRAM | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 512 Mbit Clock Frequency: 143 MHz Write Cycle Time Word Page: 14 ns Access Time: 6 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 8M x 16 Memory Interface: LVCMOS Grade: Commercial Qualification: JEDEC Packaging: 54-FBGA | 871 | ||
| N/A | M52D5121632A-7BIG | ESMT | 512Mb SDRAM Ind. | DRAM Memory | 54-FBGA (8x8) | 1.7V ~ 1.95V | -40°C – 85°C | Memory Size: 512 Mbit Clock Frequency: 143 MHz Write Cycle Time Word Page: 14 ns Access Time: 6 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 8M x 16 Memory Interface: LVCMOS Grade: Industrial Qualification: JEDEC Packaging: 54-FBGA | 604 | ||
| N/A | M52D5123216A-5BG | ESMT | 512Mb SDRAM | DRAM Memory | 90-BGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 512 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 10 ns Access Time: 4.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 32 Memory Interface: LVCMOS Grade: Commercial Qualification: JEDEC Packaging: 90-BGA | 695 | ||
| N/A | M52D5123216A-6BG | ESMT | 512Mb SDRAM | DRAM Memory | 90-BGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Memory Size: 512 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 12 ns Access Time: 5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 32 Memory Interface: LVCMOS Grade: Commercial Qualification: JEDEC Packaging: 90-BGA | 71 | ||
| N/A | M52D5123216A-6BIG | ESMT | 512Mb SDRAM Ind. | DRAM Memory | 90-BGA (8x13) | 1.7V ~ 1.95V | -40°C – 85°C | Memory Size: 512 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 12 ns Access Time: 5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 32 Memory Interface: LVCMOS Grade: Industrial Qualification: JEDEC Packaging: 90-BGA | 1,164 |
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