| N/A | | M54D1G3232A | ESMT | 1Gb LPDDR2 SDRAM | DRAM Memory | 134 BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 32 Memory Interface: Parallel | 898 | |
| N/A | | M54D1G3232A (2G) | ESMT | 1Gb LPDDR2 SDRAM | DRAM Memory | 134 BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 32 Memory Interface: Parallel | 377 | |
| N/A | | M54D2G16128A | ESMT | 2Gb LPDDR2 SDRAM | DRAM Memory | 134 Ball BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 128M x 16 Memory Interface: Parallel | 1,836 | |
| N/A | | M54D2G3264A | ESMT | 2Gb LPDDR2 SDRAM | DRAM Memory | 134 Ball BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 32 Memory Interface: Parallel | 1,379 | |
| N/A | N/A | M54D2G3264A (2C) | ESMT | 2Gb LPDDR2 SDRAM Ind. | DRAM Memory | 134 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 32 Memory Interface: Parallel | 519 | |
| N/A | N/A | M54D4G32128ZA(2C) | ESMT | 4Gb LPDDR2 SDRAM Ind. | DRAM Memory | 134 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 128M x 32 Memory Interface: Parallel | 438 | |
| N/A | | M54D5121632A | ESMT | 512Mb LPDDR2 SDRAM | DRAM Memory | 134 Ball BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 16 Memory Interface: Parallel | 1,385 | |
| N/A | | M54D5123216A | ESMT | 512Mb LPDDR2 SDRAM | DRAM Memory | 134 Ball BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 16M x 32 Memory Interface: Parallel | 461 | |
| N/A | | M55D1G1664A-CDBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 16 Memory Interface: Parallel | 1,336 | |
| N/A | | M55D1G1664A-CDBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 16 Memory Interface: Parallel | 172 | |
| N/A | | M55D1G1664A-EEBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 16 Memory Interface: Parallel | 263 | |
| N/A | | M55D1G1664A-EEBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 16 Memory Interface: Parallel | 1,872 | |
| N/A | | M55D1G1664A-GFBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 16 Memory Interface: Parallel | 824 | |
| N/A | | M55D1G1664A-GFBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 16 Memory Interface: Parallel | 59 | |
| N/A | | M55D1G3232A-CDBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 32 Memory Interface: Parallel | 667 | |
| N/A | | M55D1G3232A-CDBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 32 Memory Interface: Parallel | 164 | |
| N/A | | M55D1G3232A-EEBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 32 Memory Interface: Parallel | 1,091 | |
| N/A | | M55D1G3232A-EEBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 32 Memory Interface: Parallel | 178 | |
| N/A | | M55D1G3232A-GFBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 32 Memory Interface: Parallel | 93 | |
| N/A | | M55D1G3232A-GFBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 32 Memory Interface: Parallel | 1,254 | |