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| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
| N/A | M55D4G16256A-CDBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 800 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 256M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 157 | ||
| N/A | M55D4G16256A-EEBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 933 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 256M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 693 | ||
| N/A | M55D4G16256A-GFBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 256M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 907 | ||
| N/A | M55D4G32128A (2R) | ESMT | 4Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178 Ball BGA | 1.8V / 1.2V | -40°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM - LPDDR3 Memory Organization: 128M x 32 Memory Interface: LPDDR3 Grade: Industrial Qualification: JEDEC Packaging: 178 Ball BGA | 716 | ||
| N/A | M55D4G32128A-CDBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 800 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 128M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 31 | ||
| N/A | M55D4G32128A-CDBIG2R | ESMT | 4Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 800 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 128M x 32 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 178-BGA | 1,377 | ||
| N/A | M55D4G32128A-EEBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 933 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 128M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 87 | ||
| N/A | M55D4G32128A-EEBIG2R | ESMT | 4Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 933 MHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 128M x 32 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 178-BGA | 52 | ||
| N/A | M55D4G32128A-GFBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 128M x 32 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 178-BGA | 344 | ||
| N/A | M55D4G32128A-GFBIG2R | ESMT | 4Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Access Time: 5.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 128M x 32 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 178-BGA | 1,505 | ||
| N/A | M56Z4G16256A (2H) | ESMT | 4Gb LPDDR4x SDRAM Ind. | DRAM Memory | 200 Ball BGA | 1.7V ~ 1.95V | -40°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 18 ns Access Time: 3.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM - LPDDR4X Memory Organization: 256M x 16 Memory Interface: LPDDR4X Grade: Industrial Qualification: JEDEC Packaging: 200 Ball BGA | 425 | ||
| N/A | M56Z4G16256A2H | ESMT | 4Gb LPDDR4x SDRAM | DRAM Memory | 200 Ball BGA | 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 4 Gbit Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 18 ns Access Time: 3.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM - LPDDR4X Memory Organization: 256M x 16 Memory Interface: LPDDR4X Grade: Commercial Qualification: JEDEC Packaging: 200 Ball BGA | 1,523 | ||
| N/A | N/A | M56Z8G16512A (2H) | ESMT | 8Gb LPDDR4x SDRAM Ind. | DRAM Memory | 200 Ball BGA | 2.5V | -40°C – 85°C | Memory Size: 8 Gbit Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 18 ns Access Time: 3.5 ns Memory Type: Volatile Memory Format: DRAM Technology: LPDDR4x SDRAM Memory Organization: 512M x 16 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 200 Ball BGA | 814 | |
| N/A | M56Z8G32256A | ESMT | 8Gb LPDDR4x SDRAM | DRAM Memory | 200 Ball BGA | 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 8 Gbit Clock Frequency: 1.866 GHz Write Cycle Time Word Page: 18 ns Access Time: 3.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM - LPDDR4X Memory Organization: 256M x 32 Memory Interface: LPDDR4X Grade: Commercial Qualification: JEDEC Packaging: 200 Ball BGA | 411 | ||
| N/A | M56Z8G32256A (2H) | ESMT | 8Gb LPDDR4x SDRAM | DRAM Memory | 200 Ball BGA | 1.70V ~ 1.95V | -25°C – 85°C | Memory Size: 8 Gbit Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 18 ns Access Time: 3.5 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM - LPDDR4X Memory Organization: 256M x 32 Memory Interface: LPDDR4X Grade: Commercial Qualification: JEDEC Packaging: 200 Ball BGA | 887 | ||
 | N/A | M62371GP#RF0J | Renesas | 8-BIT 36-CH SW BUILT-IN DAC | Microcontrollers | N/A | N/A | N/A | N/A | 231 | |
| N/A | M66591GP#RB1S | Renesas | MCU LQFP | Microcontrollers | N/A | N/A | N/A | N/A | 1,611 | ||
 | M68LC302CAF16VCT | NXP Semiconductors | IC MPU M683XX 166MHZ 100LQFP | Microprocessors | 100-LQFP (14x14) | N/A | -40°C ~ 85°C (TA) | Core Processor: M68000 Number of Cores/Bus Width: 1 Core, 8/16-Bit Speed: 166MHz Co-Processors/DSP: Communications; RISC CPM RAM Controllers: DRAM Graphics Acceleration: No Voltage – I/O: 3.3V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14×14) | 368 | ||
 | M68LC302CAF20VCT | NXP Semiconductors | IC MPU M683XX 20MHZ 100LQFP | Microprocessors | 100-LQFP (14x14) | N/A | -40°C ~ 85°C (TA) | Core Processor: M68000 Number of Cores/Bus Width: 1 Core, 8/16-Bit Speed: 20MHz Co-Processors/DSP: Communications; RISC CPM RAM Controllers: DRAM Graphics Acceleration: No Voltage – I/O: 3.3V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14×14) | 247 | ||
 | M68LC302CPU16VCT | NXP Semiconductors | IC MPU M683XX 166MHZ 100LQFP | Microprocessors | 100-LQFP (14x14) | N/A | -40°C ~ 85°C (TA) | Core Processor: M68000 Number of Cores/Bus Width: 1 Core, 8/16-Bit Speed: 166MHz Co-Processors/DSP: Communications; RISC CPM RAM Controllers: DRAM Graphics Acceleration: No Voltage – I/O: 3.3V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14×14) | 720 |
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