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Total Products: 220,361
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Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp
Additional SpecificationsQtyGet A
Quote
AS4C8M16SA-7BCNAS4C8M16SA-7BCNAlliance Memory, Inc.IC DRAM 128MBIT PAR 54TFBGADRAM Memory54-TFBGA (8x8)3V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
5.4 ns
Clock Frequency:
143 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
54-TFBGA
Qualification:
N/A
Technology:
SDRAM
Write Cycle Time Word Page:
14 ns
1,528
AS4C8M16SA-7BCNTRAS4C8M16SA-7BCNTRAlliance Memory, Inc.IC DRAM 128MBIT PAR 54TFBGADRAM Memory54-TFBGA (8x8)3V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
5.4 ns
Clock Frequency:
143 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
54-TFBGA
Qualification:
N/A
Technology:
SDRAM
Write Cycle Time Word Page:
14 ns
776
AS4C8M16SA-7TCNAS4C8M16SA-7TCNAlliance Memory, Inc.IC DRAM 128MBIT PAR 54TSOP IIDRAM Memory54-TSOP II3V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
5.4 ns
Clock Frequency:
143 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
54-TSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM
Write Cycle Time Word Page:
14 ns
553
AS4C8M16SA-7TCNTRAS4C8M16SA-7TCNTRAlliance Memory, Inc.IC DRAM 128MBIT PAR 54TSOP IIDRAM Memory54-TSOP II3V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
5.4 ns
Clock Frequency:
143 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
54-TSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM
Write Cycle Time Word Page:
14 ns
1,188
AS4C8M16SB-6TINN/AAS4C8M16SB-6TINAlliance Memory, Inc.IC DRAM 128MBIT LVTTL 54TSOP IIDRAM Memory54-TSOP II3V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
5 ns
Clock Frequency:
166 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
LVTTL
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
54-TSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM
Write Cycle Time Word Page:
12 ns
300
AS4C8M16SB-6TINTRN/AAS4C8M16SB-6TINTRAlliance Memory, Inc.IC DRAM 128MBIT LVTTL 54TSOP IIDRAM Memory54-TSOP II3V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
5 ns
Clock Frequency:
166 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
LVTTL
Memory Organization:
8M x 16
Memory Size:
128 Mbit
Memory Type:
Volatile
Packaging:
54-TSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM
Write Cycle Time Word Page:
12 ns
304
AS4C8M32MSB-6BINN/AAS4C8M32MSB-6BINAlliance Memory, Inc.IC DRAM 256MBIT PARALLEL 90FBGADRAM Memory90-FBGA (8x13)1.7V ~ 1.95V-40°C ~ 85°C (TA)
Access Time:
5.5 ns
Clock Frequency:
166 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
8M x 32
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
90-VFBGA
Qualification:
N/A
Technology:
SDRAM
Write Cycle Time Word Page:
15 ns
1,200
AS4C8M32MSB-6BINTRN/AAS4C8M32MSB-6BINTRAlliance Memory, Inc.IC DRAM 256MBIT PARALLEL 90FBGADRAM Memory90-FBGA (8x13)1.7V ~ 1.95V-40°C ~ 85°C (TA)
Access Time:
5.5 ns
Clock Frequency:
166 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
8M x 32
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
90-VFBGA
Qualification:
N/A
Technology:
SDRAM
Write Cycle Time Word Page:
15 ns
97
AS4C8M32S-6TINN/AAS4C8M32S-6TINAlliance Memory, Inc.IC DRAM 256MBIT PAR 86TSOP IIDRAM Memory86-TSOP II3V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
5.5 ns
Clock Frequency:
166 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
8M x 32
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
86-TFSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM
Write Cycle Time Word Page:
N/A
1,465
AS4C8M32S-6TINTRN/AAS4C8M32S-6TINTRAlliance Memory, Inc.IC DRAM 256MBIT PAR 86TSOP IIDRAM Memory86-TSOP II3V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
5.5 ns
Clock Frequency:
166 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
8M x 32
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
86-TFSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM
Write Cycle Time Word Page:
N/A
508
AS4C8M32S-7TCNN/AAS4C8M32S-7TCNAlliance Memory, Inc.IC DRAM 256MBIT PAR 86TSOP IIDRAM Memory86-TSOP II3V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
5.5 ns
Clock Frequency:
143 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
8M x 32
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
86-TFSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM
Write Cycle Time Word Page:
N/A
1,168
AS4C8M32S-7TCNTRN/AAS4C8M32S-7TCNTRAlliance Memory, Inc.IC DRAM 256MBIT PAR 86TSOP IIDRAM Memory86-TSOP II3V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
5.5 ns
Clock Frequency:
143 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
8M x 32
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
86-TFSOP (0.400", 10.16mm Width)
Qualification:
N/A
Technology:
SDRAM
Write Cycle Time Word Page:
N/A
600
AS4C8M32SA-6BINN/AAS4C8M32SA-6BINAlliance Memory, Inc.IC DRAM 256MBIT PAR 90TFBGADRAM Memory90-TFBGA (8x13)3V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
5 ns
Clock Frequency:
166 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
8M x 32
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
90-TFBGA
Qualification:
N/A
Technology:
SDRAM
Write Cycle Time Word Page:
2 ns
529
AS4C8M32SA-6BINTRN/AAS4C8M32SA-6BINTRAlliance Memory, Inc.IC DRAM 256MBIT PAR 90TFBGADRAM Memory90-TFBGA (8x13)3V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
5 ns
Clock Frequency:
166 MHz
Grade:
Industrial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
8M x 32
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
90-TFBGA
Qualification:
N/A
Technology:
SDRAM
Write Cycle Time Word Page:
2 ns
1,006
AS4C8M32SA-7BCNN/AAS4C8M32SA-7BCNAlliance Memory, Inc.IC DRAM 256MBIT PAR 90TFBGADRAM Memory90-TFBGA (8x13)3V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
5.4 ns
Clock Frequency:
143 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
8M x 32
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
90-TFBGA
Qualification:
N/A
Technology:
SDRAM
Write Cycle Time Word Page:
2 ns
1,459
AS4C8M32SA-7BCNTRN/AAS4C8M32SA-7BCNTRAlliance Memory, Inc.IC DRAM 256MBIT PAR 90TFBGADRAM Memory90-TFBGA (8x13)3V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
5.4 ns
Clock Frequency:
143 MHz
Grade:
Commercial
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
8M x 32
Memory Size:
256 Mbit
Memory Type:
Volatile
Packaging:
90-TFBGA
Qualification:
N/A
Technology:
SDRAM
Write Cycle Time Word Page:
2 ns
1,565
AS83C196EAAS83C196EAIntel16-BIT, MROM, 8096 CPU, 40MHZMicrocontrollers160-QFPN/A-40°C ~ 125°C (TA)
Core Processor:
83C196EA
Core Size:
16-Bit
Speed:
40MHz
Connectivity:
SSIO
Peripherals:
PWM, WDT
Number of I/O:
83
Program Memory Size:
8KB (8K x 8)
Program Memory Type:
ROM
RAM Size:
4K x 8
Voltage – Supply (Vcc/Vdd):
4.5V ~ 5.5V
Data Converters:
A/D 16x10b
Oscillator Type:
External, Internal
Operating Temperature:
-40°C ~ 125°C (TA)
Mounting Type:
Surface Mount
Supplier Device Package:
160-QFP
Package / Case:
160-QFP
654
N/AN/AAS87C196ENF8IntelMICROCONTROLLER, 16 BIT, MCS96 CMicrocontrollersN/AN/AN/A
Core Size:
16-Bit
Mounting Type:
Surface Mount
676
ASFC32G31T3-51BINN/AASFC32G31T3-51BINAlliance Memory, Inc.IC FLASH 256GBIT EMMC 153FBGAeMMC Memory153-FBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
32G x 8
Memory Size:
256 Gbit
Memory Type:
Non-Volatile
Packaging:
153-TFBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
175
ASFC32G31T3-51BINTRN/AASFC32G31T3-51BINTRAlliance Memory, Inc.IC FLASH 256GBIT EMMC 153FBGAeMMC Memory153-FBGA (11.5x13)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
32G x 8
Memory Size:
256 Gbit
Memory Type:
Non-Volatile
Packaging:
153-TFBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
895

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