 | | IS43DR16320E-25DBLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 331 | |
 | | IS43DR16320E-25DBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 164 | |
 | | IS43DR16320E-3DBL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,228 | |
| N/A | | IS43DR16320E-3DBL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 41 | |
 | | IS43DR16320E-3DBLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 233 | |
 | | IS43DR16320E-3DBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 358 | |
 | | IS43DR86400C-3DBI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,899 | |
 | | IS43DR86400C-3DBI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 858 | |
| N/A | | IS43DR86400D-3DBL | Integrated Silicon Solution Inc | 512M, 1.8V, DDR2, 64MX8, 333MHZ | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,475 | |
| N/A | | IS43DR86400D-3DBL-TR | Integrated Silicon Solution Inc | 512M, 1.8V, DDR2, 64MX8, 333MHZ | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 923 | |
 | | IS43DR86400E-25DBL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,043 | |
 | | IS43DR86400E-25DBL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 998 | |
 | | IS43DR86400E-25DBLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,282 | |
 | | IS43DR86400E-25DBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 302 | |
 | | IS43DR86400E-3DBL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,043 | |
 | | IS43DR86400E-3DBL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,141 | |
 | | IS43DR86400E-3DBLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,739 | |
 | | IS43DR86400E-3DBLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TWBGA | DRAM Memory | 60-TWBGA (8x10.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 460 | |
 | N/A | IS43LQ32K01S2A-046BLI | Integrated Silicon Solution Inc | IC DRAM 32G LVSTL 2.1GHZ TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 0.57V ~ 0.65V, 1.06V ~ 1.17V, 1.70V ~ 1.95V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 463 | |
 | N/A | IS43LQ32K01S2A-046BLI-TR | Integrated Silicon Solution Inc | 32G, 1.06-1.17/1.70-1.95V, LPDDR | DRAM Memory | 200-TFBGA (10x14.5) | 0.57V ~ 0.65V, 1.06V ~ 1.17V, 1.70V ~ 1.95V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 166 | |