 | N/A | MT29F256G08AUCABH3-10:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,064 | |
 | N/A | MT29F256G08AUCABH3-10IT:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 638 | |
 | N/A | MT29F256G08AUCABH3-10IT:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 341 | |
 | | MT29F256G08AUCABH3-10ITZ:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 870 | |
 | N/A | MT29F256G08AUCABH3-10ITZ:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,520 | |
 | N/A | MT29F256G08AUCABH3-10Z:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 35 | |
 | N/A | MT29F256G08AUCABH3-10Z:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,510 | |
 | | MT29F256G08AUCABJ3-10Z:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 132LBGA | Flash Memory | 132-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,114 | |
 | | MT29F256G08AUCABJ3-10Z:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132LBGA | Flash Memory | 132-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 961 | |
| N/A | N/A | MT29F256G08AUCABK4-10:A | Micron Technology Inc. | IC FLASH 256GBIT PARALLEL 100MHZ | Flash Memory | N/A | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 687 | |
 | N/A | MT29F256G08AUCDBJ6-6:D | Micron Technology Inc. | IC FLASH 256GBIT PAR 132LBGA | Flash Memory | 132-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 65 | |
 | N/A | MT29F256G08AUCDBJ6-6IT:D | Micron Technology Inc. | IC FLASH 256GBIT PAR 132LBGA | Flash Memory | 132-LBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 569 | |
 | N/A | MT29F256G08AUCDBJ6-6IT:D TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132LBGA | Flash Memory | 132-LBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,830 | |
 | N/A | MT29F256G08AUEDBJ6-12:D TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132LBGA | Flash Memory | 132-LBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,647 | |
 | N/A | MT29F256G08CBCBBJ4-37:B | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 331 | |
 | N/A | MT29F256G08CBCBBJ4-5M:B | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,035 | |
 | N/A | MT29F256G08CBCBBJ4-5M:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,295 | |
| N/A | N/A | MT29F256G08CBCBBL06B3WC1 | Micron Technology Inc. | IC FLASH 256GBIT PARALLEL DIE | Flash Memory | Die | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 564 | |
 | N/A | MT29F256G08CBCBBWP-10:B | Micron Technology Inc. | IC FLASH 256GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 637 | |
 | N/A | MT29F256G08CBCBBWP-10:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 381 | |