| N/A | N/A | MT40A8G4CLU-062H:E TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (7.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 8G x 4 Write Cycle Time Word Page: N/A | 712 | |
| N/A | N/A | MT40A8G4CLU-075H:E | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (7.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 8G x 4 Write Cycle Time Word Page: N/A | 611 | |
| N/A | N/A | MT40A8G4CLU-075H:E TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (7.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 8G x 4 Write Cycle Time Word Page: N/A | 1,484 | |
 | N/A | MT40A8G4KVA-075H:G | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (8x12) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 8G x 4 Write Cycle Time Word Page: N/A | 520 | |
 | N/A | MT40A8G4KVA-075H:G TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 78FBGA | DRAM Memory | 78-FBGA (8x12) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 8G x 4 Write Cycle Time Word Page: N/A | 761 | |
| N/A | | MT40A8G4NEA-062E:F | Micron Technology Inc. | IC DRAM 32GBIT PAR 78FBGA | DRAM Memory | 78-FBGA (7.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 8G x 4 Write Cycle Time Word Page: N/A | 1,761 | |
| N/A | | MT40A8G4NEA-062E:F TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 78FBGA | DRAM Memory | 78-FBGA (7.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 8G x 4 Write Cycle Time Word Page: N/A | 1,123 | |
| N/A | | MT40A8G4VNE-062H:B | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 1.6GHZ | DRAM Memory | N/A | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 8G x 4 Write Cycle Time Word Page: N/A | 1,144 | |
| N/A | | MT40A8G4VNE-062H:B TR | Micron Technology Inc. | IC DRAM 32GBIT PARALLEL 1.6GHZ | DRAM Memory | N/A | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 8G x 4 Write Cycle Time Word Page: N/A | 994 | |
 | | MT46V128M4BN-6:F | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 128M x 4 Write Cycle Time Word Page: 15 ns | 618 | |
 | | MT46V128M4FN-5B:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 128M x 4 Write Cycle Time Word Page: 15 ns | 92 | |
 | | MT46V128M4FN-6:D TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 128M x 4 Write Cycle Time Word Page: 15 ns | 885 | |
 | | MT46V128M4FN-6:F TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 128M x 4 Write Cycle Time Word Page: 15 ns | 746 | |
 | N/A | MT46V128M4FN-75:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (10x12.5) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 128M x 4 Write Cycle Time Word Page: 15 ns | 206 | |
 | | MT46V128M4P-5B:J | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 128M x 4 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,364 | |
 | | MT46V128M4TG-5B:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 128M x 4 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 851 | |
 | | MT46V128M4TG-6T:D TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 128M x 4 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 337 | |
 | | MT46V128M4TG-6T:F TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 128M x 4 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 222 | |
 | N/A | MT46V128M4TG-75:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 128M x 4 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,132 | |
 | | MT46V16M16BG-5B:F TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x14) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 803 | |