 | N/A | MT46V32M16TG-75 IT:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,370 | |
 | N/A | MT46V32M16TG-75 IT:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,315 | |
 | N/A | MT46V32M16TG-75 L:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,173 | |
 | N/A | MT46V32M16TG-75 L:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 65 | |
 | N/A | MT46V32M16TG-75:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 978 | |
 | N/A | MT46V32M16TG-75:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,014 | |
 | N/A | MT46V32M16TG-75E:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,588 | |
 | N/A | MT46V32M16TG-75E:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 378 | |
 | N/A | MT46V32M16TG-75Z:C | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 380 | |
 | N/A | MT46V32M16TG-75Z:C TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,490 | |
 | N/A | MT46V32M4TG-6T:D TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 4 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 169 | |
 | | MT46V32M8BG-5B:GTR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x14) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Write Cycle Time Word Page: 15 ns | 168 | |
 | | MT46V32M8BG-6:GTR | Micron Technology Inc. | IC DRAM 256MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x14) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Write Cycle Time Word Page: 15 ns | 502 | |
 | | MT46V32M8CY-5B:M | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x12.5) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Write Cycle Time Word Page: 15 ns | 588 | |
 | | MT46V32M8CY-5B:M TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x12.5) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Write Cycle Time Word Page: 15 ns | 993 | |
 | | MT46V32M8FG-5B:G TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x14) | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Write Cycle Time Word Page: 15 ns | 744 | |
 | | MT46V32M8FG-6 IT:G TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x14) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Write Cycle Time Word Page: 15 ns | 198 | |
 | | MT46V32M8FG-6:G TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x14) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Write Cycle Time Word Page: 15 ns | 817 | |
 | | MT46V32M8P-5B IT:M | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 688 | |
 | | MT46V32M8P-5B IT:M TR | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,080 | |