Suntsu’s DRAM memory catalog offers high-performance volatile memory solutions for data-intensive computing, industrial automation, networking, and embedded systems. Whether you need high-speed DDR4, LPDDR, or legacy SDRAM chips, our extensive inventory helps engineers and purchasing managers secure reliable components with minimal lead times. Use our advanced part search tool to filter by density, speed, configuration, or manufacturer to find the exact DRAM solution that will keep your production line running smoothly.
DRAM Memory
Total Products: 3,051
| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | N/A | MT53E1G32D2FW-046 AAT:C TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,242 | |
 | MT53E1G32D2FW-046 AIT:A | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 831 | ||
 | MT53E1G32D2FW-046 AIT:A TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,544 | ||
 | MT53E1G32D2FW-046 AIT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,984 | ||
 | MT53E1G32D2FW-046 AIT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 491 | ||
 | N/A | MT53E1G32D2FW-046 AIT:C | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,100 | |
 | N/A | MT53E1G32D2FW-046 AIT:C TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,651 | |
 | MT53E1G32D2FW-046 AUT:A | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 559 | ||
 | MT53E1G32D2FW-046 AUT:A TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 165 | ||
 | MT53E1G32D2FW-046 AUT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 196 | ||
 | MT53E1G32D2FW-046 AUT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,969 | ||
 | N/A | MT53E1G32D2FW-046 AUT:C | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,294 | |
 | N/A | MT53E1G32D2FW-046 AUT:C TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: AEC-Q100 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,324 | |
 | N/A | MT53E1G32D2FW-046 IT:A | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 341 | |
 | N/A | MT53E1G32D2FW-046 IT:A TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,543 | |
 | N/A | MT53E1G32D2FW-046 IT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,211 | |
 | MT53E1G32D2FW-046 IT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Access Time: 3.5 ns Clock Frequency: 2.133 GHz Grade: Automotive Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,527 | ||
 | N/A | MT53E1G32D2FW-046 IT:C | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | N/A | N/A | Access Time: N/A Clock Frequency: 2.133 GHz Grade: N/A Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: N/A Packaging: 200-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 915 | |
| N/A | N/A | MT53E1G32D2FW-046 IT:C TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | N/A | N/A | Access Time: N/A Clock Frequency: 2.133 GHz Grade: N/A Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: N/A Packaging: 200-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 849 | |
 | N/A | MT53E1G32D2FW-046 WT:A | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Access Time: N/A Clock Frequency: 2.133 GHz Grade: Industrial Memory Format: DRAM Memory Interface: Parallel Memory Organization: 1G x 32 Memory Size: 32 Gbit Memory Type: Volatile Packaging: 200-TFBGA Qualification: N/A Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,098 |
About DRAM Memory
Dynamic Random-Access Memory (DRAM) is a type of high-density, volatile semiconductor memory designed for quick data access and low-latency processing. It requires a continuous power supply and a dynamic refresh cycle to maintain stored information. DRAM serves as the primary working memory in digital systems, enabling microprocessors and microcontrollers to efficiently read and write active data. The DRAM category encompasses various generations and form factors, including standard DDR SDRAM, low-power LPDDR for energy-sensitive mobile devices, and legacy DDR2 or DDR3 variants that are customized for long-lifecycle industrial applications.
Engineers evaluate key performance metrics when specifying DRAM chips, including clock speed, data rate, bus width, and operating temperature range, in order to maximize system throughput. These memory integrated circuits (ICs) are essential components in enterprise computing, telecommunications infrastructure, automotive infotainment, and industrial automation. Suntsu offers a comprehensive selection of reliable DRAM solutions that seamlessly integrate with advanced processors, field-programmable gate arrays (FPGAs), and other complementary memory components, ensuring optimal performance in demanding digital designs.
We’ve Got You Covered!
If you can’t find the parts you’re looking for in our database, don’t worry! We’re here to help. Simply fill out the form below with the part number you need and your contact information, and we’ll locate it for you. If you prefer to speak to someone directly, our sales team is available at 949.783.7300.
