Flash Memory

Suntsu offers a comprehensive catalog of flash memory solutions designed for various applications, including industrial, consumer electronics, automotive, and telecommunications. Our selection features high-density NAND flash, high-speed NOR flash, and secure serial flash chips, all engineered to ensure reliable data retention and meet stringent performance and endurance standards. You can utilize our advanced part search tool to filter options by memory size, interface type, or package configuration, helping you find the ideal flash memory component for your project.

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Total Products: 400
ImageData
Sheet
Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp
Additional SpecificationsQtyGet A
Quote
N/AF59L8G81KSA-25TIG2RESMT8Gb NAND Flash Ind.Flash MemoryTSOPI-482.7V ~ 3.6V-40°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8 x 2 die
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
625
N/AF59L8G81XA-25BG2YESMT8Gb NAND FlashFlash MemoryBGA-632.7V ~ 3.6V0°C – 70°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
63-BGA
7
N/AF59L8G81XA-25BIG2YESMT8Gb NAND Flash Ind.Flash MemoryBGA-632.7V ~ 3.6V-40°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
63-BGA
934
N/AF59L8G81XA-25TG2YESMT8Gb NAND FlashFlash MemoryTSOPI-482.7V ~ 3.6V0°C – 70°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
48-TSOPI
393
N/AF59L8G81XA-25TIG2YESMT8Gb NAND Flash Ind.Flash MemoryTSOPI-482.7V ~ 3.6V-40°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
501
N/AN/AFM62D1G1GMB (2G)ESMT1Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162 ball2.5V0°C – 70°C
Memory Size:
1 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162 ball
501
N/AN/AFM62D2G2GKA (2Q)ESMT2Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
1,410
N/AN/AFM62D2G2GXA (2L)ESMT2Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
442
N/AN/AFM62D4G2GXB (2V)ESMT4Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
1,215
N/AN/AFM6BD1G1GMB (2G)ESMT1Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162 ball2.5V0°C – 70°C
Memory Size:
1 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
32M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162 ball
149
N/AN/AFM6BD2G2GXA(2L)ESMT2Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
931
N/AN/AFM6BD2G2GXA2LESMT2Gb NAND+LPDDR2 MCP Ind.Flash Memory10.5x8 (mm),162ball2.5V-40°C – 85°C
Memory Size:
2 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 32
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
304
N/AN/AFM6BD4G2GXB(2V)ESMT4Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
64M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162ball
246
N/AN/AFM6BD4G4GKMA (2J)ESMT4Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162 ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162 ball
1,049
N/AN/AFM6BD4G4GXMB (2V)ESMT4Gb NAND+LPDDR2 MCPFlash Memory10.5x8 (mm),162 ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
533 MHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
128M x 32
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
10.5x8 (mm),162 ball
219
N/AN/AFM6HZ4G4GXBESMT4Gb NAND+LPDDR4x MCPFlash Memory9.5x8 (mm),149ball2.5V0°C – 70°C
Memory Size:
4 Gbit
Clock Frequency:
2.133 GHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
256M x 16
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
9.5x8 (mm),149ball
1,591
N/AN/AFM6HZ8G8GKDZA (2R)ESMT8Gb NAND+LPDDR4x MCP Auto.Flash Memory9.5x8 (mm),149ball2.5V-40°C – 105°C
Memory Size:
8 Gbit
Clock Frequency:
2.133 GHz
Write Cycle Time Word Page:
15 ns
Access Time:
N/A
Memory Type:
Volatile, Non-Volatile
Memory Format:
MCP
Technology:
MCP (NAND + DRAM)
Memory Organization:
256M x 16 x 2 die
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
9.5x8 (mm),149ball
1,072
N/AN/AKGD-128Mbx8-SLC-NAND-Flash,-x8,-1.8V/3VESMTNAND Flash KGDFlash MemoryN/A2.5VN/A
Memory Size:
N/A
Clock Frequency:
N/A
Write Cycle Time Word Page:
N/A
Access Time:
N/A
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SLC NAND Flash
Memory Organization:
128M x 8
Memory Interface:
Parallel
Grade:
Known Good Die
Qualification:
N/A
Packaging:
N/A
587
N/AN/AKGD-256Mbx8-SLC-NAND-Flash,-x8,-1.8V/3.3VESMTNAND Flash KGDFlash MemoryN/A2.5VN/A
Memory Size:
N/A
Clock Frequency:
N/A
Write Cycle Time Word Page:
N/A
Access Time:
N/A
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SLC NAND Flash
Memory Organization:
256M x 8
Memory Interface:
Parallel
Grade:
Known Good Die
Qualification:
N/A
Packaging:
N/A
1,947
N/AN/AKGD-512Mbx8-SLC-NAND-Flash,-x8,-1.8V/-3VESMTNAND Flash KGDFlash MemoryN/A2.5VN/A
Memory Size:
N/A
Clock Frequency:
N/A
Write Cycle Time Word Page:
N/A
Access Time:
N/A
Memory Type:
Non-Volatile
Memory Format:
NAND Flash
Technology:
SLC NAND Flash
Memory Organization:
512M x 8
Memory Interface:
Parallel
Grade:
Known Good Die
Qualification:
N/A
Packaging:
N/A
790

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About Flash Memory

Flash memory is a type of non-volatile, solid-state semiconductor storage technology that retains data permanently, even without power. It operates using electrically erasable programmable read-only memory (EEPROM) technology, which allows data to be written, read, and erased in large blocks rather than one byte at a time. This results in excellent read-write efficiency.

Flash memory can be divided into two main architectures: NOR flash and NAND flash. NOR flash is known for its fast random-read capabilities, making it ideal for direct code execution and firmware storage. On the other hand, NAND flash offers high storage density and quick write/erase times, making it well-suited for mass data storage and file systems.

Engineers select flash memory integrated circuits (ICs) based on key performance parameters, including memory density, interface type (such as SPI, Quad SPI, or parallel), write endurance, and the ability to operate in extended temperature ranges. Flash memory is a vital component in various fields, including industrial automation, automotive electronics, medical imaging, and consumer devices. It serves as the primary medium for boot code, firmware, and telemetry data logging. Suntsu’s range of robust flash memory chips provides the durability and high-speed data throughput required to support advanced microcontrollers and FPGAs in demanding embedded system architectures.

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