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Flash Memory

Suntsu offers a comprehensive catalog of flash memory solutions designed for various applications, including industrial, consumer electronics, automotive, and telecommunications. Our selection features high-density NAND flash, high-speed NOR flash, and secure serial flash chips, all engineered to ensure reliable data retention and meet stringent performance and endurance standards. You can utilize our advanced part search tool to filter options by memory size, interface type, or package configuration, helping you find the ideal flash memory component for your project.

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Total Products: 1,408
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
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N/A
F59L8G81KSA-25BIG2RESMT8Gb NAND Flash Ind.Flash MemoryBGA-632.7V ~ 3.6V-40°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8 x 2 die
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
63-BGA
499
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N/A
F59L8G81KSA-25TG2RESMT8Gb NAND FlashFlash MemoryTSOPI-482.7V ~ 3.6V0°C – 70°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8 x 2 die
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
48-TSOPI
70
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N/A
F59L8G81KSA-25TIAG2RESMT8Gb NAND Flash Auto.Flash MemoryTSOPI-482.7V ~ 3.6V-40°C – 105°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8 x 2 die
Memory Interface:
Parallel
Grade:
Automotive
Qualification:
AEC-Q100
Packaging:
48-TSOPI
629
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N/A
F59L8G81KSA-25TIG2RESMT8Gb NAND Flash Ind.Flash MemoryTSOPI-482.7V ~ 3.6V-40°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
512M x 8 x 2 die
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
625
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N/A
F59L8G81XA-25BG2YESMT8Gb NAND FlashFlash MemoryBGA-632.7V ~ 3.6V0°C – 70°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
63-BGA
7
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N/A
F59L8G81XA-25BIG2YESMT8Gb NAND Flash Ind.Flash MemoryBGA-632.7V ~ 3.6V-40°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
63-BGA
934
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N/A
F59L8G81XA-25TG2YESMT8Gb NAND FlashFlash MemoryTSOPI-482.7V ~ 3.6V0°C – 70°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Commercial
Qualification:
N/A
Packaging:
48-TSOPI
393
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QUOTE
N/A
F59L8G81XA-25TIG2YESMT8Gb NAND Flash Ind.Flash MemoryTSOPI-482.7V ~ 3.6V-40°C – 85°C
Memory Size:
8 Gbit
Clock Frequency:
N/A
Write Cycle Time Word Page:
200 µs
Access Time:
20 ns
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
NAND Flash - SLC
Memory Organization:
1G x 8
Memory Interface:
Parallel
Grade:
Industrial
Qualification:
JEDEC
Packaging:
48-TSOPI
501
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QUOTE
FBFS064GBA-EA40N/AFBFS064GBA-EA40FlexxonBGA UFS 2.2Flash Memory153 BGAN/A-40°C - 85°C
Memory Size:
512 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
3D TLC
Memory Organization:
64G x 8
Memory Interface:
UFS 2.2
Grade:
Automotive grade 3
Packaging:
11.5x13x1.4mm
Qualification:
AEC-Q100 Grade 3
1,294
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FBFS064GBA-EB40N/AFBFS064GBA-EB40FlexxonBGA UFS 3.1Flash Memory153 FBGAN/A-40°C - 85°C
Memory Size:
512 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
3D TLC
Memory Organization:
64G x 8
Memory Interface:
UFS 3.1
Grade:
Automotive grade 3
Packaging:
11.5x13x1.4mm
Qualification:
AEC-Q100 Grade 3
1,042
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FBFS064GBB-EA40N/AFBFS064GBB-EA40FlexxonBGA UFS 2.2Flash Memory153 BGAN/A-40°C - 105°C
Memory Size:
512 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
3D TLC
Memory Organization:
64G x 8
Memory Interface:
UFS 2.2
Grade:
Automotive grade 2
Packaging:
11.5x13x1.4mm
Qualification:
AEC-Q100 Grade 2
92
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FBFS064GBB-EB40N/AFBFS064GBB-EB40FlexxonBGA UFS 3.1Flash Memory153 FBGAN/A-40°C - 105°C
Memory Size:
512 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
3D TLC
Memory Organization:
64G x 8
Memory Interface:
UFS 3.1
Grade:
Automotive grade 2
Packaging:
11.5x13x1.4mm
Qualification:
AEC-Q100 Grade 2
128
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FBFS064GBE-EA40N/AFBFS064GBE-EA40FlexxonBGA UFS 2.2Flash Memory153 BGAN/A-40°C - 85°C
Memory Size:
512 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
3D TLC
Memory Organization:
64G x 8
Memory Interface:
UFS 2.2
Grade:
Industrial
Packaging:
11.5x13x1.4mm
Qualification:
N/A
415
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FBFS064GBE-EB40N/AFBFS064GBE-EB40FlexxonBGA UFS 3.1Flash Memory153 FBGAN/A-40°C - 85°C
Memory Size:
512 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
3D TLC
Memory Organization:
64G x 8
Memory Interface:
UFS 3.1
Grade:
Industrial
Packaging:
11.5x13x1.4mm
Qualification:
N/A
218
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QUOTE
FBFS064GBG-EA40N/AFBFS064GBG-EA40FlexxonBGA UFS 2.2Flash Memory153 BGAN/A-25°C - 85°C
Memory Size:
512 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
3D TLC
Memory Organization:
64G x 8
Memory Interface:
UFS 2.2
Grade:
Industrial
Packaging:
11.5x13x1.4mm
Qualification:
N/A
311
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QUOTE
FBFS064GBG-EB40N/AFBFS064GBG-EB40FlexxonBGA UFS 3.1Flash Memory153 FBGAN/A-25°C - 85°C
Memory Size:
512 Gbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
3D TLC
Memory Organization:
64G x 8
Memory Interface:
UFS 3.1
Grade:
Industrial
Packaging:
11.5x13x1.4mm
Qualification:
N/A
448
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QUOTE
FBFS128GBA-EA40N/AFBFS128GBA-EA40FlexxonBGA UFS 2.2Flash Memory153 BGAN/A-40°C - 85°C
Memory Size:
1.024 Tbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
3D TLC
Memory Organization:
128G x 8
Memory Interface:
UFS 2.2
Grade:
Automotive grade 3
Packaging:
11.5x13x1.4mm
Qualification:
AEC-Q100 Grade 3
318
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QUOTE
FBFS128GBA-EB40N/AFBFS128GBA-EB40FlexxonBGA UFS 3.1Flash Memory153 FBGAN/A-40°C - 85°C
Memory Size:
1.024 Tbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
3D TLC
Memory Organization:
128G x 8
Memory Interface:
UFS 3.1
Grade:
Automotive grade 3
Packaging:
11.5x13x1.4mm
Qualification:
AEC-Q100 Grade 3
1,531
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QUOTE
FBFS128GBB-EA40N/AFBFS128GBB-EA40FlexxonBGA UFS 2.2Flash Memory153 BGAN/A-40°C - 105°C
Memory Size:
1.024 Tbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
3D TLC
Memory Organization:
128G x 8
Memory Interface:
UFS 2.2
Grade:
Automotive grade 2
Packaging:
11.5x13x1.4mm
Qualification:
AEC-Q100 Grade 2
748
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QUOTE
FBFS128GBB-EB40N/AFBFS128GBB-EB40FlexxonBGA UFS 3.1Flash Memory153 FBGAN/A-40°C - 105°C
Memory Size:
1.024 Tbit
Clock Frequency:
N/A
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
3D TLC
Memory Organization:
128G x 8
Memory Interface:
UFS 3.1
Grade:
Automotive grade 2
Packaging:
11.5x13x1.4mm
Qualification:
AEC-Q100 Grade 2
576
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About Flash Memory

Flash memory is a type of non-volatile, solid-state semiconductor storage technology that retains data permanently, even without power. It operates using electrically erasable programmable read-only memory (EEPROM) technology, which allows data to be written, read, and erased in large blocks rather than one byte at a time. This results in excellent read-write efficiency.

Flash memory can be divided into two main architectures: NOR flash and NAND flash. NOR flash is known for its fast random-read capabilities, making it ideal for direct code execution and firmware storage. On the other hand, NAND flash offers high storage density and quick write/erase times, making it well-suited for mass data storage and file systems.

Engineers select flash memory integrated circuits (ICs) based on key performance parameters, including memory density, interface type (such as SPI, Quad SPI, or parallel), write endurance, and the ability to operate in extended temperature ranges. Flash memory is a vital component in various fields, including industrial automation, automotive electronics, medical imaging, and consumer devices. It serves as the primary medium for boot code, firmware, and telemetry data logging. Suntsu’s range of robust flash memory chips provides the durability and high-speed data throughput required to support advanced microcontrollers and FPGAs in demanding embedded system architectures.

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