Suntsu offers a comprehensive catalog of flash memory solutions designed for various applications, including industrial, consumer electronics, automotive, and telecommunications. Our selection features high-density NAND flash, high-speed NOR flash, and secure serial flash chips, all engineered to ensure reliable data retention and meet stringent performance and endurance standards. You can utilize our advanced part search tool to filter options by memory size, interface type, or package configuration, helping you find the ideal flash memory component for your project.
Flash Memory
Total Products: 1,408
| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
 | N/A | MT29F256G08CKCABH2-10Z:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: N/A Clock Frequency: 100 MHz Grade: Commercial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: 100-TBGA Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 618 | |
 | N/A | MT29F256G08CKCABH2-12:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: N/A Clock Frequency: 83 MHz Grade: Commercial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: 100-TBGA Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,062 | |
 | N/A | MT29F256G08CKCABH2-12Z:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: N/A Clock Frequency: 83 MHz Grade: Commercial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: 100-TBGA Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,685 | |
 | N/A | MT29F256G08CKCABH2-12Z:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: N/A Clock Frequency: 83 MHz Grade: Commercial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: 100-TBGA Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 501 | |
 | N/A | MT29F256G08CKCDBJ5-6R:D | Micron Technology Inc. | IC FLASH 256GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: N/A Clock Frequency: 167 MHz Grade: Commercial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: N/A Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 267 | |
 | N/A | MT29F256G08CKCDBJ5-6R:D TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: N/A Clock Frequency: 167 MHz Grade: Commercial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: N/A Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,261 | |
 | N/A | MT29F256G08CMAAAC5:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 52VLGA | Flash Memory | 52-VLGA (18x14) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: N/A Clock Frequency: 200 MHz Grade: Commercial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: 52-VLGA Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,019 | |
 | N/A | MT29F256G08CMAAAC5:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 52VLGA | Flash Memory | 52-VLGA (18x14) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: N/A Clock Frequency: 200 MHz Grade: Commercial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: 52-VLGA Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 927 | |
 | N/A | MT29F256G08CMCABH2-10RZ:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: N/A Clock Frequency: 100 MHz Grade: Commercial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: 100-TBGA Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 229 | |
 | N/A | MT29F256G08CMCABH2-10RZ:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: N/A Clock Frequency: 100 MHz Grade: Commercial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: 100-TBGA Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 907 | |
 | N/A | MT29F256G08CMCABH2-10Z:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: N/A Clock Frequency: 100 MHz Grade: Commercial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: 100-TBGA Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 949 | |
 | N/A | MT29F256G08CMCABH2-10Z:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: N/A Clock Frequency: 100 MHz Grade: Commercial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: 100-TBGA Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,778 | |
 | N/A | MT29F256G08CMCABH2-12:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: N/A Clock Frequency: 83 MHz Grade: Commercial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: 100-TBGA Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,706 | |
 | N/A | MT29F256G08CMCABH2-12ITZ:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 83 MHz Grade: Industrial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: 100-TBGA Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 90 | |
 | N/A | MT29F256G08CMCABH2-12ITZ:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Access Time: N/A Clock Frequency: 83 MHz Grade: Industrial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: 100-TBGA Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 318 | |
 | N/A | MT29F256G08CMCABJ2-10RZ:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: N/A Clock Frequency: 100 MHz Grade: Commercial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: N/A Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 940 | |
 | N/A | MT29F256G08CMCABJ2-10RZ:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: N/A Clock Frequency: 100 MHz Grade: Commercial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: N/A Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,088 | |
 | N/A | MT29F256G08CMCBBH2-10:B | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: N/A Clock Frequency: 100 MHz Grade: Commercial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: 100-TBGA Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 317 | |
 | N/A | MT29F256G08CMCBBH2-10:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: N/A Clock Frequency: 100 MHz Grade: Commercial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: 100-TBGA Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 396 | |
 | N/A | MT29F256G08CMCDBJ5-6R:D | Micron Technology Inc. | IC FLASH 256GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Access Time: N/A Clock Frequency: 167 MHz Grade: Commercial Memory Format: FLASH Memory Interface: Parallel Memory Organization: 32G x 8 Memory Size: 256 Gbit Memory Type: Non-Volatile Packaging: N/A Qualification: N/A Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 398 |
About Flash Memory
Flash memory is a type of non-volatile, solid-state semiconductor storage technology that retains data permanently, even without power. It operates using electrically erasable programmable read-only memory (EEPROM) technology, which allows data to be written, read, and erased in large blocks rather than one byte at a time. This results in excellent read-write efficiency.
Flash memory can be divided into two main architectures: NOR flash and NAND flash. NOR flash is known for its fast random-read capabilities, making it ideal for direct code execution and firmware storage. On the other hand, NAND flash offers high storage density and quick write/erase times, making it well-suited for mass data storage and file systems.
Engineers select flash memory integrated circuits (ICs) based on key performance parameters, including memory density, interface type (such as SPI, Quad SPI, or parallel), write endurance, and the ability to operate in extended temperature ranges. Flash memory is a vital component in various fields, including industrial automation, automotive electronics, medical imaging, and consumer devices. It serves as the primary medium for boot code, firmware, and telemetry data logging. Suntsu’s range of robust flash memory chips provides the durability and high-speed data throughput required to support advanced microcontrollers and FPGAs in demanding embedded system architectures.
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