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Flash Memory

Suntsu offers a comprehensive catalog of flash memory solutions designed for various applications, including industrial, consumer electronics, automotive, and telecommunications. Our selection features high-density NAND flash, high-speed NOR flash, and secure serial flash chips, all engineered to ensure reliable data retention and meet stringent performance and endurance standards. You can utilize our advanced part search tool to filter options by memory size, interface type, or package configuration, helping you find the ideal flash memory component for your project.

Part Search

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Total Products: 1,408
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
Quote
N/AN/AMT29F32G08CBACAL73A3WC1LMicron Technology Inc.IC FLASH 32GBIT PARALLEL DIEFlash MemoryDie2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
20 ns
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
Die
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
20 ns
1,266
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QUOTE
N/AN/AMT29F32G08CBACAL73A3WC1PMicron Technology Inc.IC FLASH 32GBIT PARALLEL DIEFlash MemoryDie2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
Die
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
126
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QUOTE
N/AN/AMT29F32G08CBACAL73A3WC1PVMicron Technology Inc.IC FLASH 32GBIT PARALLEL DIEFlash MemoryDie2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
Die
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
833
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QUOTE
MT29F32G08CBACAWP-IT:CN/AMT29F32G08CBACAWP-IT:CMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
143
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QUOTE
MT29F32G08CBACAWP-IT:C TRN/AMT29F32G08CBACAWP-IT:C TRMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
689
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QUOTE
MT29F32G08CBACAWP-ITZ:CN/AMT29F32G08CBACAWP-ITZ:CMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,374
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QUOTE
MT29F32G08CBACAWP-ITZ:C TRN/AMT29F32G08CBACAWP-ITZ:C TRMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
104
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QUOTE
MT29F32G08CBACAWP-Z:CN/AMT29F32G08CBACAWP-Z:CMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
902
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QUOTE
MT29F32G08CBACAWP-Z:C TRN/AMT29F32G08CBACAWP-Z:C TRMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
957
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QUOTE
MT29F32G08CBACAWP:C TRN/AMT29F32G08CBACAWP:C TRMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,171
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QUOTE
N/AN/AMT29F32G08CBADAL83A3WC1Micron Technology Inc.IC FLASH 32GBIT PARALLEL DIEFlash MemoryDie2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
Die
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,087
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QUOTE
N/AN/AMT29F32G08CBADAL83A3WC1-MMicron Technology Inc.IC FLASH 32GBIT PARALLEL DIEFlash MemoryDie2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
Die
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
239
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QUOTE
MT29F32G08CBADAWP-M:DN/AMT29F32G08CBADAWP-M:DMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
479
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QUOTE
MT29F32G08CBADAWP-M:D TRN/AMT29F32G08CBADAWP-M:D TRMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
587
GET A
QUOTE
MT29F32G08CBADAWP:DN/AMT29F32G08CBADAWP:DMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,044
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QUOTE
MT29F32G08CBADAWP:D TRN/AMT29F32G08CBADAWP:D TRMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
932
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QUOTE
MT29F32G08CBADBWP-12:D TRN/AMT29F32G08CBADBWP-12:D TRMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
83 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
93
GET A
QUOTE
MT29F32G08CBADBWP-12IT:DN/AMT29F32G08CBADBWP-12IT:DMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
83 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
681
GET A
QUOTE
MT29F32G08CBADBWP-12IT:D TRN/AMT29F32G08CBADBWP-12IT:D TRMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
83 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
232
GET A
QUOTE
MT29F32G08CBADBWPR:DN/AMT29F32G08CBADBWPR:DMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
715
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QUOTE

Featured Brands

About Flash Memory

Flash memory is a type of non-volatile, solid-state semiconductor storage technology that retains data permanently, even without power. It operates using electrically erasable programmable read-only memory (EEPROM) technology, which allows data to be written, read, and erased in large blocks rather than one byte at a time. This results in excellent read-write efficiency.

Flash memory can be divided into two main architectures: NOR flash and NAND flash. NOR flash is known for its fast random-read capabilities, making it ideal for direct code execution and firmware storage. On the other hand, NAND flash offers high storage density and quick write/erase times, making it well-suited for mass data storage and file systems.

Engineers select flash memory integrated circuits (ICs) based on key performance parameters, including memory density, interface type (such as SPI, Quad SPI, or parallel), write endurance, and the ability to operate in extended temperature ranges. Flash memory is a vital component in various fields, including industrial automation, automotive electronics, medical imaging, and consumer devices. It serves as the primary medium for boot code, firmware, and telemetry data logging. Suntsu’s range of robust flash memory chips provides the durability and high-speed data throughput required to support advanced microcontrollers and FPGAs in demanding embedded system architectures.

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