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Flash Memory

Suntsu offers a comprehensive catalog of flash memory solutions designed for various applications, including industrial, consumer electronics, automotive, and telecommunications. Our selection features high-density NAND flash, high-speed NOR flash, and secure serial flash chips, all engineered to ensure reliable data retention and meet stringent performance and endurance standards. You can utilize our advanced part search tool to filter options by memory size, interface type, or package configuration, helping you find the ideal flash memory component for your project.

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Total Products: 1,408
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
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MT29F32G08CBADBWPR:D TRN/AMT29F32G08CBADBWPR:D TRMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
680
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MT29F32G08CBCCBH1-12Z:CN/AMT29F32G08CBCCBH1-12Z:CMicron Technology Inc.IC FLASH 32GBIT PARALLEL 100VBGAFlash Memory100-VBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
83 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
100-VBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
514
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MT29F32G08CBCCBH1-12Z:C TRN/AMT29F32G08CBCCBH1-12Z:C TRMicron Technology Inc.IC FLASH 32GBIT PARALLEL 100VBGAFlash Memory100-VBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
83 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
100-VBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
470
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MT29F32G08CBCDBJ4-10:D TRN/AMT29F32G08CBCDBJ4-10:D TRMicron Technology Inc.IC FLASH 32GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
100 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
405
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QUOTE
N/AN/AMT29F32G08CBEDBL83A3WC1Micron Technology Inc.IC FLASH 32GBIT PARALLEL DIEFlash MemoryDie2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
Die
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
882
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QUOTE
MT29F32G08CFACAWP:CN/AMT29F32G08CFACAWP:CMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,422
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QUOTE
MT29F32G08CFACAWP:C TRN/AMT29F32G08CFACAWP:C TRMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
773
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QUOTE
MT29F32G08CFACBWP-12:CN/AMT29F32G08CFACBWP-12:CMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
83 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
946
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QUOTE
MT29F32G08QAAWP:A TRN/AMT29F32G08QAAWP:A TRMicron Technology Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,078
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QUOTE
MT29F512G08AUCBBH8-6:B TRN/AMT29F512G08AUCBBH8-6:B TRMicron Technology Inc.IC FLASH 512GBIT PAR 152LBGAFlash Memory152-LBGA (14x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
166 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
152-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
N/A
250
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QUOTE
MT29F512G08AUCBBH8-6IT:BN/AMT29F512G08AUCBBH8-6IT:BMicron Technology Inc.IC FLASH 512GBIT PAR 152LBGAFlash Memory152-LBGA (14x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
166 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
152-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
N/A
753
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QUOTE
MT29F512G08AUCBBH8-6IT:B TRN/AMT29F512G08AUCBBH8-6IT:B TRMicron Technology Inc.IC FLASH 512GBIT PAR 152LBGAFlash Memory152-LBGA (14x18)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
166 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
152-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
N/A
1,491
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QUOTE
N/AN/AMT29F512G08AUCBBK8-6:B TRMicron Technology Inc.IC FLASH 512GBIT PARALLEL 166MHZFlash MemoryN/A2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
166 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
N/A
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
N/A
1,689
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QUOTE
MT29F512G08AUEBBH8-12:BN/AMT29F512G08AUEBBH8-12:BMicron Technology Inc.IC FLASH 512GBIT PAR 152LBGAFlash Memory152-LBGA (14x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
83 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
152-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
N/A
1,766
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QUOTE
MT29F512G08AUEBBH8-12:B TRN/AMT29F512G08AUEBBH8-12:B TRMicron Technology Inc.IC FLASH 512GBIT PAR 152LBGAFlash Memory152-LBGA (14x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
83 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
152-LBGA
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
N/A
789
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QUOTE
MT29F512G08CECBBJ4-37:BN/AMT29F512G08CECBBJ4-37:BMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
267 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
1,659
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QUOTE
MT29F512G08CECBBJ4-37:B TRN/AMT29F512G08CECBBJ4-37:B TRMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
267 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
799
GET A
QUOTE
MT29F512G08CECBBJ4-5M:BN/AMT29F512G08CECBBJ4-5M:BMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
450
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QUOTE
MT29F512G08CECBBJ4-5M:B TRN/AMT29F512G08CECBBJ4-5M:B TRMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
200 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
155
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QUOTE
MT29F512G08CEHBBJ4-3R:BN/AMT29F512G08CEHBBJ4-3R:BMicron Technology Inc.IC FLASH 512GBIT PAR 132VBGAFlash Memory132-VBGA (12x18)2.5V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
N/A
Clock Frequency:
333 MHz
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
132-VBGA
Qualification:
N/A
Technology:
FLASH - NAND (MLC)
Write Cycle Time Word Page:
N/A
712
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QUOTE

Featured Brands

About Flash Memory

Flash memory is a type of non-volatile, solid-state semiconductor storage technology that retains data permanently, even without power. It operates using electrically erasable programmable read-only memory (EEPROM) technology, which allows data to be written, read, and erased in large blocks rather than one byte at a time. This results in excellent read-write efficiency.

Flash memory can be divided into two main architectures: NOR flash and NAND flash. NOR flash is known for its fast random-read capabilities, making it ideal for direct code execution and firmware storage. On the other hand, NAND flash offers high storage density and quick write/erase times, making it well-suited for mass data storage and file systems.

Engineers select flash memory integrated circuits (ICs) based on key performance parameters, including memory density, interface type (such as SPI, Quad SPI, or parallel), write endurance, and the ability to operate in extended temperature ranges. Flash memory is a vital component in various fields, including industrial automation, automotive electronics, medical imaging, and consumer devices. It serves as the primary medium for boot code, firmware, and telemetry data logging. Suntsu’s range of robust flash memory chips provides the durability and high-speed data throughput required to support advanced microcontrollers and FPGAs in demanding embedded system architectures.

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