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Flash Memory

Suntsu offers a comprehensive catalog of flash memory solutions designed for various applications, including industrial, consumer electronics, automotive, and telecommunications. Our selection features high-density NAND flash, high-speed NOR flash, and secure serial flash chips, all engineered to ensure reliable data retention and meet stringent performance and endurance standards. You can utilize our advanced part search tool to filter options by memory size, interface type, or package configuration, helping you find the ideal flash memory component for your project.

Part Search

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Total Products: 1,408
ImageData
Sheet		Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp		Additional SpecificationsQtyGet A
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N/A
TC58NVG5H2HTAI0Kioxia America, Inc.32GB SLC NANDFlash Memory48-TSOP IN/A-40°C ~ 85°C
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
N/A
196
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TH58NVG5S0FTA20
TH58NVG5S0FTA20Kioxia America, Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V0°C ~ 70°C (TA)
Access Time:
25 ns
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
25 ns
857
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N/AN/ATH58NVG5S0FTAK0Kioxia America, Inc.IC FLASH 32GBIT PAR 48TSOP IFlash Memory48-TSOP I2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
Parallel
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
25 ns
1,174
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N/A
TH58NVG6H2HTA20Kioxia America, Inc.64GB SLC NANDFlash Memory48-TSOPN/A0°C ~ 70°C
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
N/A
Memory Organization:
8G x 8
Memory Size:
64 bit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
N/A
621
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N/A
TH58NVG6H2HTAK0Kioxia America, Inc.64GB SLC NANDFlash Memory48-TSOP I2.7V ~ 3.6V-40°C ~ 85°C
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
N/A
Memory Organization:
8G x 8
Memory Size:
64 bit
Memory Type:
Non-Volatile
Packaging:
48-TFSOP (0.724", 18.40mm Width)
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
N/A
52
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N/A
TH58TEG6H2HBA4CKioxia America, Inc.64GB SLC NANDFlash Memory132-BGA2.7V ~ 3.6V0°C ~ 70°C
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
SPI
Memory Organization:
8G x 8
Memory Size:
64 bit
Memory Type:
Non-Volatile
Packaging:
132-BGA
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
N/A
476
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N/A
TH58TEG8H2HBA89Kioxia America, Inc.256GB SLC NANDFlash Memory132-BGA2.7V ~ 3.6V0°C ~ 70°C
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Commercial
Memory Format:
FLASH
Memory Interface:
SPI
Memory Organization:
32G x 8
Memory Size:
256 Gbit
Memory Type:
Non-Volatile
Packaging:
132-BGA
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
N/A
777
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QUOTE
N/A
TH58TEG8H2HBAS9Kioxia America, Inc.256GB SLC NANDFlash Memory132-BGA2.7V ~ 3.6V-40°C ~ 85°C
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
eMMC_5.1
Memory Organization:
32G x 8
Memory Size:
256 Gbit
Memory Type:
Non-Volatile
Packaging:
132-BGA
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
N/A
1,277
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THGAF8G8T23BAIL
THGAF8G8T23BAILKioxia America, Inc.IC FLASH 32GBIT UFS 153WFBGAFlash Memory153-WFBGA (11.5x13)2.7V ~ 3.6V-25°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
UFS
Memory Organization:
4G x 8
Memory Size:
32 Gbit
Memory Type:
Non-Volatile
Packaging:
153-WFBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
117
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THGAF8G9T43BAIR
THGAF8G9T43BAIRKioxia America, Inc.IC FLASH 64GBIT UFS 153VFBGAFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-25°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
UFS
Memory Organization:
8G x 8
Memory Size:
64 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
793
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QUOTE
THGAF8T1T83BAIR
THGAF8T1T83BAIRKioxia America, Inc.IC FLASH 256GBIT UFS 153VFBGAFlash Memory153-VFBGA (11.5x13)2.7V ~ 3.6V-25°C ~ 85°C (TC)
Access Time:
N/A
Clock Frequency:
N/A
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
UFS
Memory Organization:
32G x 8
Memory Size:
256 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND
Write Cycle Time Word Page:
N/A
1,163
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QUOTE
UFS64G-CY14-02N01
UFS64G-CY14-02N01Kingston TechnologyUFS 3.1 G4 2L 153B 64GB -25c toFlash Memory153-FBGA (11.5x13)2.4V ~ 2.7V-25°C ~ 85°C
Access Time:
N/A
Clock Frequency:
26 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
UFS 3.1
Memory Organization:
64G x 8
Memory Size:
512 Gbit
Memory Type:
Non-Volatile
Packaging:
153-VFBGA
Qualification:
N/A
Technology:
FLASH - NAND (TLC)
Write Cycle Time Word Page:
N/A
1,234
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W25N512GVBIG
W25N512GVBIGWinbond ElectronicsIC FLASH 512MBIT SPI 24TFBGAFlash Memory24-TFBGA (6x8)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
7 ns
Clock Frequency:
166 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
SPI - Quad I/O
Memory Organization:
64M x 8
Memory Size:
512 Mbit
Memory Type:
Non-Volatile
Packaging:
24-TBGA
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
700 μs
196
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QUOTE
W25N512GVBIG TR
W25N512GVBIG TRWinbond ElectronicsIC FLASH 512MBIT SPI 24TFBGAFlash Memory24-TFBGA (6x8)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
6 ns
Clock Frequency:
166 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
SPI - Quad I/O
Memory Organization:
64M x 8
Memory Size:
512 Mbit
Memory Type:
Non-Volatile
Packaging:
24-TBGA
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
700 μs
235
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QUOTE
W25N512GVBIR
W25N512GVBIRWinbond ElectronicsIC FLASH 512MBIT SPI 24TFBGAFlash Memory24-TFBGA (6x8)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
6 ns
Clock Frequency:
166 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
SPI - Quad I/O
Memory Organization:
64M x 8
Memory Size:
512 Mbit
Memory Type:
Non-Volatile
Packaging:
24-TBGA
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
700 μs
1,764
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QUOTE
W25N512GVBIT
W25N512GVBITWinbond ElectronicsIC FLASH 512MBIT SPI 24TFBGAFlash Memory24-TFBGA (6x8)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
7 ns
Clock Frequency:
166 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
SPI - Quad I/O
Memory Organization:
64M x 8
Memory Size:
512 Mbit
Memory Type:
Non-Volatile
Packaging:
24-TBGA
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
700 μs
1,351
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QUOTE
W25N512GVBIT TR
W25N512GVBIT TRWinbond ElectronicsIC FLASH 512MBIT SPI 24TFBGAFlash Memory24-TFBGA (6x8)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
6 ns
Clock Frequency:
166 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
SPI - Quad I/O
Memory Organization:
64M x 8
Memory Size:
512 Mbit
Memory Type:
Non-Volatile
Packaging:
24-TBGA
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
700 μs
444
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QUOTE
W25N512GVEIG
W25N512GVEIGWinbond ElectronicsIC FLASH 512MBIT SPI/QUAD 8WSONFlash Memory8-WSON (8x6)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
N/A
Clock Frequency:
166 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
SPI - Quad I/O
Memory Organization:
64M x 8
Memory Size:
512 Mbit
Memory Type:
Non-Volatile
Packaging:
8-WDFN Exposed Pad
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
700 μs
796
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QUOTE
W25N512GVEIG TR
W25N512GVEIG TRWinbond ElectronicsIC FLASH 512MBIT SPI/QUAD 8WSONFlash Memory8-WSON (8x6)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
6 ns
Clock Frequency:
166 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
SPI - Quad I/O
Memory Organization:
64M x 8
Memory Size:
512 Mbit
Memory Type:
Non-Volatile
Packaging:
8-WDFN Exposed Pad
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
700 μs
696
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QUOTE
W25N512GVEIR
W25N512GVEIRWinbond ElectronicsIC FLASH 512MBIT SPI/QUAD 8WSONFlash Memory8-WSON (8x6)2.7V ~ 3.6V-40°C ~ 85°C (TA)
Access Time:
6 ns
Clock Frequency:
166 MHz
Grade:
Industrial
Memory Format:
FLASH
Memory Interface:
SPI - Quad I/O
Memory Organization:
64M x 8
Memory Size:
512 Mbit
Memory Type:
Non-Volatile
Packaging:
8-WDFN Exposed Pad
Qualification:
N/A
Technology:
FLASH - NAND (SLC)
Write Cycle Time Word Page:
700 μs
898
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QUOTE

Featured Brands

About Flash Memory

Flash memory is a type of non-volatile, solid-state semiconductor storage technology that retains data permanently, even without power. It operates using electrically erasable programmable read-only memory (EEPROM) technology, which allows data to be written, read, and erased in large blocks rather than one byte at a time. This results in excellent read-write efficiency.

Flash memory can be divided into two main architectures: NOR flash and NAND flash. NOR flash is known for its fast random-read capabilities, making it ideal for direct code execution and firmware storage. On the other hand, NAND flash offers high storage density and quick write/erase times, making it well-suited for mass data storage and file systems.

Engineers select flash memory integrated circuits (ICs) based on key performance parameters, including memory density, interface type (such as SPI, Quad SPI, or parallel), write endurance, and the ability to operate in extended temperature ranges. Flash memory is a vital component in various fields, including industrial automation, automotive electronics, medical imaging, and consumer devices. It serves as the primary medium for boot code, firmware, and telemetry data logging. Suntsu’s range of robust flash memory chips provides the durability and high-speed data throughput required to support advanced microcontrollers and FPGAs in demanding embedded system architectures.

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