| N/A | | F59L4G81KA-25BG2R | ESMT | 4Gb NAND Flash | Flash Memory | BGA-63 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,006 | |
| N/A | | F59L4G81KA-25BIAG2R | ESMT | 4Gb NAND Flash Auto. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,573 | |
| N/A | | F59L4G81KA-25BIG2R | ESMT | 4Gb NAND Flash Ind. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 4 | |
| N/A | | F59L4G81KA-25TG2R | ESMT | 4Gb NAND Flash | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,624 | |
| N/A | | F59L4G81KA-25TIAG2R | ESMT | 4Gb NAND Flash Auto. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 487 | |
| N/A | | F59L4G81KA-25TIG2R | ESMT | 4Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 419 | |
| N/A | | F59L4G81KSA-25BCIG2N | ESMT | 4Gb NAND Flash Ind. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 200 | |
| N/A | | F59L4G81KSA-25BIG2N | ESMT | 4Gb NAND Flash Ind. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 870 | |
| N/A | | F59L4G81KSA-25TIG2N | ESMT | 4Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 859 | |
| N/A | | F59L4G81XB-25BCG2X | ESMT | 4Gb NAND Flash | Flash Memory | BGA-67 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 859 | |
| N/A | | F59L4G81XB-25BCIAG2X | ESMT | 4Gb NAND Flash Auto. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 457 | |
| N/A | | F59L4G81XB-25BCIG2X | ESMT | 4Gb NAND Flash Ind. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 249 | |
| N/A | | F59L4G81XB-25BG2X | ESMT | 4Gb NAND Flash | Flash Memory | BGA-63 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 85 | |
| N/A | | F59L4G81XB-25BIAG2X | ESMT | 4Gb NAND Flash Auto. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,097 | |
| N/A | | F59L4G81XB-25BIG2X | ESMT | 4Gb NAND Flash Ind. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 944 | |
| N/A | | F59L4G81XB-25TG2X | ESMT | 4Gb NAND Flash | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 802 | |
| N/A | | F59L4G81XB-25TIAG2X | ESMT | 4Gb NAND Flash Auto. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 585 | |
| N/A | | F59L4G81XB-25TIG2X | ESMT | 4Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 83 | |
| N/A | | F59L4G81XB-IP(2X) | ESMT | 4Gb NAND Flash Ind. | Flash Memory | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: SLC NAND Flash Memory Organization: 512M x 8 Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 200 | |
| N/A | N/A | F59L8G81KSA (2R) | ESMT | 8Gb NAND Flash Auto. | Flash Memory | 48 pin TSOPI/ 63 Ball BGA | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: SLC NAND Flash Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA | 445 | |