| N/A | | F59L1G81LB-25BCG2M | ESMT | 1Gb NAND Flash | Flash Memory | BGA-67 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 604 | |
| N/A | | F59L1G81LB-25BCIAG2M | ESMT | 1Gb NAND Flash Auto. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 837 | |
| N/A | | F59L1G81LB-25BCIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 892 | |
| N/A | | F59L1G81LB-25BG2M | ESMT | 1Gb NAND Flash | Flash Memory | BGA-63 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 857 | |
| N/A | | F59L1G81LB-25BIAG2M | ESMT | 1Gb NAND Flash Auto. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 578 | |
| N/A | | F59L1G81LB-25BIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,191 | |
| N/A | | F59L1G81LB-25TG2M | ESMT | 1Gb NAND Flash | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,984 | |
| N/A | | F59L1G81LB-25TIAG2M | ESMT | 1Gb NAND Flash Auto. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 333 | |
| N/A | | F59L1G81LB-25TIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,084 | |
| N/A | | F59L1G81LB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Flash Memory | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: SLC NAND Flash Memory Organization: 1G x 8 Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 1,041 | |
| N/A | | F59L1G81MB-25BCG2M | ESMT | 1Gb NAND Flash | Flash Memory | BGA-67 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,687 | |
| N/A | | F59L1G81MB-25BCIAG2M | ESMT | 1Gb NAND Flash Auto. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 199 | |
| N/A | | F59L1G81MB-25BCIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | BGA-67 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 524 | |
| N/A | | F59L1G81MB-25BG2M | ESMT | 1Gb NAND Flash | Flash Memory | BGA-63 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 495 | |
| N/A | | F59L1G81MB-25BIAG2M | ESMT | 1Gb NAND Flash Auto. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,403 | |
| N/A | | F59L1G81MB-25BIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | BGA-63 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 235 | |
| N/A | | F59L1G81MB-25TG2M | ESMT | 1Gb NAND Flash | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 106 | |
| N/A | | F59L1G81MB-25TIAG2M | ESMT | 1Gb NAND Flash Auto. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 105°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 619 | |
| N/A | | F59L1G81MB-25TIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 2.7V ~ 3.6V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 889 | |
| N/A | | F59L1G81MB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Flash Memory | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: SLC NAND Flash Memory Organization: 128M x 8 Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 101 | |