| N/A | N/A | F59D2G81KA (2N) | ESMT | 2Gb NAND Flash Auto. | Flash Memory | 48 Pin TSOP/ 63 Ball BGA/ 67 Ball BGA | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: SLC NAND Flash Memory Organization: 256M x 8 Memory Interface: Parallel Packaging: 48 Pin TSOP/ 63 Ball BGA/ 67 Ball BGA | 1,034 | |
| N/A | | F59D2G81KA-45BCG2N | ESMT | 2Gb NAND Flash | Flash Memory | BGA-67 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 708 | |
| N/A | | F59D2G81KA-45BCIAG2N | ESMT | 2Gb NAND Flash Auto. | Flash Memory | BGA-67 | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 707 | |
| N/A | | F59D2G81KA-45BCIG2N | ESMT | 2Gb NAND Flash Ind. | Flash Memory | BGA-67 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 689 | |
| N/A | | F59D2G81KA-45BG2N | ESMT | 2Gb NAND Flash | Flash Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 498 | |
| N/A | | F59D2G81KA-45BIAG2N | ESMT | 2Gb NAND Flash Auto. | Flash Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 1,156 | |
| N/A | | F59D2G81KA-45BIG2N | ESMT | 2Gb NAND Flash Ind. | Flash Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 1,215 | |
| N/A | | F59D2G81KA-45TG2N | ESMT | 2Gb NAND Flash | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 338 | |
| N/A | | F59D2G81KA-45TIAG2N | ESMT | 2Gb NAND Flash Auto. | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 1,069 | |
| N/A | | F59D2G81KA-45TIG2N | ESMT | 2Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 689 | |
| N/A | | F59D2G81XA-45BG2B | ESMT | 2Gb NAND Flash | Flash Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 440 | |
| N/A | | F59D2G81XA-45BIG2B | ESMT | 2Gb NAND Flash Ind. | Flash Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 984 | |
| N/A | | F59D2G81XA-45TG2B | ESMT | 2Gb NAND Flash | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 494 | |
| N/A | | F59D2G81XA-45TIG2B | ESMT | 2Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 256M x 8 Memory Interface: Parallel | 188 | |
| N/A | | F59D2G81XA-IP(2B) | ESMT | 2Gb NAND Flash Ind. | Flash Memory | 48 Pin TSOPI/ 63 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: SLC NAND Flash Memory Organization: 256M x 8 Memory Interface: Parallel Packaging: 48 Pin TSOPI/ 63 Ball BGA | 20 | |
| N/A | | F59D4G81KA-45BCG2R | ESMT | 4Gb NAND Flash | Flash Memory | BGA-67 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 260 | |
| N/A | | F59D4G81KA-45BCIG2R | ESMT | 4Gb NAND Flash Ind. | Flash Memory | BGA-67 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 209 | |
| N/A | | F59D4G81KA-45BG2R | ESMT | 4Gb NAND Flash | Flash Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 232 | |
| N/A | | F59D4G81KA-45BIG2R | ESMT | 4Gb NAND Flash Ind. | Flash Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 231 | |
| N/A | | F59D4G81KA-45TG2R | ESMT | 4Gb NAND Flash | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 433 | |