| N/A | | F59D1G161MB-45BIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 64M x 16 Memory Interface: Parallel | 971 | |
| N/A | | F59D1G161MB-45TG2M | ESMT | 1Gb NAND Flash | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 64M x 16 Memory Interface: Parallel | 1,387 | |
| N/A | | F59D1G161MB-45TIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 64M x 16 Memory Interface: Parallel | 92 | |
| N/A | | F59D1G161MB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Flash Memory | 48 pin TSOPI/ 63 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: SLC NAND Flash Memory Organization: 1G x 8 Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA | 1,546 | |
| N/A | | F59D1G81LB-45BCG2M | ESMT | 1Gb NAND Flash | Flash Memory | BGA-67 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 726 | |
| N/A | | F59D1G81LB-45BCIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | BGA-67 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 156 | |
| N/A | | F59D1G81LB-45BG2M | ESMT | 1Gb NAND Flash | Flash Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 57 | |
| N/A | | F59D1G81LB-45BIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 710 | |
| N/A | | F59D1G81LB-45TG2M | ESMT | 1Gb NAND Flash | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 55 | |
| N/A | | F59D1G81LB-45TIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,315 | |
| N/A | | F59D1G81LB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Flash Memory | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: SLC NAND Flash Memory Organization: 1G x 8 Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 138 | |
| N/A | | F59D1G81LB&F59D1G161LB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Flash Memory | 48 pin TSOPI; 63/ 67 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: SLC NAND Flash Memory Organization: 1G x 16 Memory Interface: Parallel Packaging: 48 pin TSOPI; 63/ 67 Ball BGA | 299 | |
| N/A | | F59D1G81MB-45BCG2M | ESMT | 1Gb NAND Flash | Flash Memory | BGA-67 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,712 | |
| N/A | | F59D1G81MB-45BCIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | BGA-67 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 806 | |
| N/A | | F59D1G81MB-45BG2M | ESMT | 1Gb NAND Flash | Flash Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 711 | |
| N/A | | F59D1G81MB-45BIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 1,452 | |
| N/A | | F59D1G81MB-45TG2M | ESMT | 1Gb NAND Flash | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 230 | |
| N/A | | F59D1G81MB-45TIG2M | ESMT | 1Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: NAND Flash - SLC Memory Organization: 128M x 8 Memory Interface: Parallel | 120 | |
| N/A | | F59D1G81MB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Flash Memory | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: SLC NAND Flash Memory Organization: 1G x 8 Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 1,797 | |
| N/A | | F59D1G81MB&F59D1G161MB-IP(2M) | ESMT | 1Gb NAND Flash Ind. | Flash Memory | 48 pin TSOPI; 48/ 63/ 67 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 350 µs Technology: SLC NAND Flash Memory Organization: 1G x 8 Memory Interface: Parallel Packaging: 48 pin TSOPI; 48/ 63/ 67 Ball BGA | 989 | |