| N/A | | F59D4G81KA-45TIG2R | ESMT | 4Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 400 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 309 | |
| N/A | | F59D4G81XB-45BCG2X | ESMT | 4Gb NAND Flash | Flash Memory | BGA-67 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 723 | |
| N/A | | F59D4G81XB-45BCIAG2X | ESMT | 4Gb NAND Flash Auto. | Flash Memory | BGA-67 | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,031 | |
| N/A | | F59D4G81XB-45BCIG2X | ESMT | 4Gb NAND Flash Ind. | Flash Memory | BGA-67 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 7 | |
| N/A | | F59D4G81XB-45BG2X | ESMT | 4Gb NAND Flash | Flash Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,358 | |
| N/A | | F59D4G81XB-45BIAG2X | ESMT | 4Gb NAND Flash Auto. | Flash Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1 | |
| N/A | | F59D4G81XB-45BIG2X | ESMT | 4Gb NAND Flash Ind. | Flash Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 536 | |
| N/A | | F59D4G81XB-45TG2X | ESMT | 4Gb NAND Flash | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 6 | |
| N/A | | F59D4G81XB-45TIAG2X | ESMT | 4Gb NAND Flash Auto. | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,134 | |
| N/A | | F59D4G81XB-45TIG2X | ESMT | 4Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 Memory Interface: Parallel | 1,918 | |
| N/A | | F59D4G81XB-IP(2X) | ESMT | 4Gb NAND Flash Ind. | Flash Memory | 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: SLC NAND Flash Memory Organization: 512M x 8 Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA/ 67 Ball BGA | 698 | |
| N/A | N/A | F59D8G81KSA (2R) | ESMT | 8Gb NAND Flash Auto. | Flash Memory | 48 pin TSOPI/ 63 Ball BGA | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 400 µs Technology: SLC NAND Flash Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel Packaging: 48 pin TSOPI/ 63 Ball BGA | 572 | |
| N/A | | F59D8G81KSA-45BG2R | ESMT | 8Gb NAND Flash | Flash Memory | BGA-63 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel | 569 | |
| N/A | | F59D8G81KSA-45BIAG2R | ESMT | 8Gb NAND Flash Auto. | Flash Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel | 313 | |
| N/A | | F59D8G81KSA-45BIG2R | ESMT | 8Gb NAND Flash Ind. | Flash Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel | 471 | |
| N/A | | F59D8G81KSA-45TG2R | ESMT | 8Gb NAND Flash | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel | 502 | |
| N/A | | F59D8G81KSA-45TIAG2R | ESMT | 8Gb NAND Flash Auto. | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 105°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel | 780 | |
| N/A | | F59D8G81KSA-45TIG2R | ESMT | 8Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 512M x 8 x 2 die Memory Interface: Parallel | 88 | |
| N/A | | F59D8G81XA-45BIG2Y | ESMT | 8Gb NAND Flash Ind. | Flash Memory | BGA-63 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 1G x 8 Memory Interface: Parallel | 394 | |
| N/A | | F59D8G81XA-45TIG2Y | ESMT | 8Gb NAND Flash Ind. | Flash Memory | TSOPI-48 | 1.7V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 200 µs Technology: NAND Flash - SLC Memory Organization: 1G x 8 Memory Interface: Parallel | 1,101 | |