 | | IS45S16800F-6BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 1,197 | |
 | | IS45S16800F-6CTLA1 | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 907 | |
 | | IS45S16800F-6CTLA1-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 49 | |
 | | IS45S16800F-6TLA1 | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 825 | |
 | | IS45S16800F-6TLA1-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,041 | |
 | | IS45S16800F-7BLA1 | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 734 | |
 | | IS45S16800F-7BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 527 | |
 | | IS45S16800F-7BLA2 | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 37 | |
 | | IS45S16800F-7BLA2-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 1,560 | |
 | | IS45S16800F-7CTLA1 | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,373 | |
 | | IS45S16800F-7CTLA1-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,773 | |
 | | IS45S16800F-7CTLA2 | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 465 | |
 | | IS45S16800F-7CTLA2-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,635 | |
 | | IS45S16800F-7TLA1 | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 516 | |
 | | IS45S16800F-7TLA1-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,288 | |
 | | IS45S16800F-7TLA2 | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 339 | |
 | | IS45S16800F-7TLA2-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,142 | |
 | N/A | IS45S16800J-6BLA1 | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 756 | |
 | N/A | IS45S16800J-7BLA1 | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 128M, | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 261 | |
 | N/A | IS45S16800J-7BLA1-TR | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 128M, | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 126 | |