 | | IS45S32200L-7BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 727 | |
 | | IS45S32200L-7BLA2 | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 510 | |
 | | IS45S32200L-7BLA2-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 1,311 | |
 | | IS45S32200L-7TLA1 | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 33 | |
 | | IS45S32200L-7TLA1-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 571 | |
 | | IS45S32200L-7TLA2 | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 130 | |
 | | IS45S32200L-7TLA2-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,508 | |
 | N/A | IS45S32200N-6BLA1 | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 64M, 3 | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 1,185 | |
 | N/A | IS45S32200N-6BLA1-TR | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 64M, 3 | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 38 | |
 | N/A | IS45S32200N-7BLA1 | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 64M, 3 | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 689 | |
 | N/A | IS45S32200N-7BLA1-TR | Integrated Silicon Solution Inc | AUTOMOTIVE (-40 TO +85C), 64M, 3 | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 373 | |
 | N/A | IS45S32200N-7BLA2 | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Organization: 2M x 32 Write Cycle Time Word Page: N/A | 827 | |
 | N/A | IS45S32200N-7TLA1 | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 304 | |
 | | IS45S32400B-6BLA1 | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 12 | |
 | | IS45S32400B-6BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 861 | |
 | | IS45S32400B-6TLA1 | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,216 | |
 | | IS45S32400B-6TLA1-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 47 | |
 | | IS45S32400B-7BLA1 | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 41 | |
 | | IS45S32400B-7BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 951 | |
 | | IS45S32400B-7TLA1 | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 486 | |