 | | IS46DR16320E-3DBLA1 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,028 | |
 | | IS46DR16320E-3DBLA1-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 695 | |
 | | IS46DR16320E-3DBLA2 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,542 | |
 | | IS46DR16320E-3DBLA2-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 84TWBGA | DRAM Memory | 84-TWBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 865 | |
 | | IS46R16160D-5TLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 738 | |
 | | IS46R16160D-5TLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,673 | |
 | | IS46R16160D-6BLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 569 | |
 | | IS46R16160D-6BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 357 | |
 | | IS46R16160D-6BLA2 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,081 | |
 | | IS46R16160D-6BLA2-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 351 | |
 | | IS46R16160D-6TLA2 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 354 | |
 | | IS46R16160D-6TLA2-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 530 | |
 | | IS46R16160F-5BLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,022 | |
 | | IS46R16160F-5BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,216 | |
 | | IS46R16160F-5TLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 797 | |
 | | IS46R16160F-5TLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 228 | |
 | | IS46R16160F-6BLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 403 | |
 | | IS46R16160F-6BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 475 | |
 | | IS46R16160F-6BLA2 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 691 | |
 | | IS46R16160F-6BLA2-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,727 | |