 | | IS46R16160F-6TLA1 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,413 | |
 | | IS46R16160F-6TLA1-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 360 | |
 | | IS46R16160F-6TLA2 | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 885 | |
 | | IS46R16160F-6TLA2-TR | Integrated Silicon Solution Inc | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 249 | |
 | | IS46R16320D-5BLA1 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 703 | |
 | | IS46R16320D-5BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 854 | |
 | | IS46R16320D-6TLA2 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,846 | |
 | | IS46R16320D-6TLA2-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,566 | |
 | | IS46R16320F-5BLA1 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,031 | |
 | | IS46R16320F-5BLA1-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x13) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 505 | |
 | | IS46R16320F-6TLA2 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 62 | |
 | | IS46R16320F-6TLA2-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Organization: 32M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,164 | |
 | | IS46R86400D-6TLA1 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 839 | |
 | | IS46R86400D-6TLA1-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,761 | |
 | | IS46R86400F-6TLA1 | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 145 | |
 | | IS46R86400F-6TLA1-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,384 | |
 | | IS80C286-20 | Renesas | IC MPU 20MHZ 68PLCC | Microprocessors | 68-PLCC (24.23x24.23) | N/A | -40°C ~ 85°C (TA) | Number of Cores/Bus Width: 1 Core, 16-Bit Co-Processors/DSP: Math Engine; 80C287 Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 68-LCC (J-Lead) Supplier Device Package: 68-PLCC (24.23×24.23) | 1,015 | |
 | | ISL15100IRZ | Renesas | IC DRIVER 1/0 16QFN | Drivers, Receivers, Transceivers | 16-QFN (4x4) | 8V ~ 13.2V | -40°C ~ 85°C | Number of Drivers/Receivers: 1/0 Voltage – Supply: 8V ~ 13.2V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-TFQFN Exposed Pad Supplier Device Package: 16-QFN (4×4) | 301 | |
 | | ISL15100IRZ-T13 | Renesas | IC DRIVER 1/0 16QFN | Drivers, Receivers, Transceivers | 16-QFN (4x4) | 8V ~ 13.2V | -40°C ~ 85°C | Number of Drivers/Receivers: 1/0 Voltage – Supply: 8V ~ 13.2V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-TFQFN Exposed Pad Supplier Device Package: 16-QFN (4×4) | 259 | |
 | | ISL15100IRZ-T7 | Renesas | IC DRIVER 1/0 16QFN | Drivers, Receivers, Transceivers | 16-QFN (4x4) | 8V ~ 13.2V | -40°C ~ 85°C | Number of Drivers/Receivers: 1/0 Voltage – Supply: 8V ~ 13.2V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-TFQFN Exposed Pad Supplier Device Package: 16-QFN (4×4) | 1,038 | |