| N/A | | M13S2561616A-4TIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 715 | |
| N/A | | M13S2561616A-5BG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 207 | |
| N/A | | M13S2561616A-5BIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 672 | |
| N/A | | M13S2561616A-5TG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 1,317 | |
| N/A | | M13S2561616A-5TIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 765 | |
| N/A | | M13S2561616A-6BG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 1,219 | |
| N/A | | M13S2561616A-6BIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 403 | |
| N/A | | M13S2561616A-6TG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 307 | |
| N/A | | M13S2561616A-6TIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 16 Memory Interface: Parallel | 595 | |
| N/A | | M13S5121632A-5TG2T | ESMT | 512Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 923 | |
| N/A | | M13S5121632A-5TIG2T | ESMT | 512Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 165 | |
| N/A | | M13S5121632A-6TG2T | ESMT | 512Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 94 | |
| N/A | | M13S5121632A-6TIG2T | ESMT | 512Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 35 | |
| N/A | | M13S64164A-4TG2C | ESMT | 64Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 211 | |
| N/A | | M13S64164A-5TG2C | ESMT | 64Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 1,288 | |
| N/A | | M13S64164A-6TG2C | ESMT | 64Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 817 | |
| N/A | | M14D128168A-1.5BG2Y | ESMT | 128Mb DDR2 SDRAM | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C – 95°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 446 | |
| N/A | | M14D128168A-1.6BG2Y | ESMT | 128Mb DDR2 SDRAM | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C – 95°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 1,165 | |
| N/A | | M14D128168A-1.8BG2Y | ESMT | 128Mb DDR2 SDRAM | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C – 95°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 1,124 | |
| N/A | | M14D128168A-1(2Y) | ESMT | 128Mb DDR SDRAM | DRAM Memory | 84 Ball FBGA | 2.5V | 0°C – 95°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 688 | |