| N/A | | M12L5121632A-6BG2T | ESMT | 512Mb SDRAM | DRAM Memory | BGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 12 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 565 | |
| N/A | | M12L5121632A-6T(2T) | ESMT | 512Mb SDRAM | DRAM Memory | 54 pin TSOPII/ 54 Ball FBGA | 2.5V | 0°C – 70°C | Write Cycle Time Word Page: 12 ns Memory Organization: 32M x 16 Memory Interface: Parallel Packaging: 54 pin TSOPII/ 54 Ball FBGA | 1,040 | |
| N/A | | M12L5121632A-6TG2T | ESMT | 512Mb SDRAM | DRAM Memory | TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 12 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 1,871 | |
| N/A | | M12L5121632A-7B(2T) | ESMT | 512Mb SDRAM | DRAM Memory | 54 pin TSOPII/ 54 Ball FBGA | 2.5V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 32M x 16 Memory Interface: Parallel Packaging: 54 pin TSOPII/ 54 Ball FBGA | 776 | |
| N/A | | M12L5121632A-7BG2T | ESMT | 512Mb SDRAM | DRAM Memory | BGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 346 | |
| N/A | | M12L5121632A-7T(2T) | ESMT | 512Mb SDRAM | DRAM Memory | 54 pin TSOPII/ 54 Ball FBGA | 2.5V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 32M x 16 Memory Interface: Parallel Packaging: 54 pin TSOPII/ 54 Ball FBGA | 256 | |
| N/A | | M12L5121632A-7TG2T | ESMT | 512Mb SDRAM | DRAM Memory | TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 1,749 | |
| N/A | | M12L64164A-5B(2C) | ESMT | 64Mb SDRAM Ind. | DRAM Memory | 54 TSOPII/ 54 VBGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 10 ns Memory Organization: 4M x 16 Memory Interface: Parallel Packaging: 54 TSOPII/ 54 VBGA | 761 | |
| N/A | | M12L64164A-5BG2C | ESMT | 64Mb SDRAM | DRAM Memory | 54-VBGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 701 | |
| N/A | | M12L64164A-5T(2C) | ESMT | 64Mb SDRAM Ind. | DRAM Memory | 54 TSOPII/ 54 VBGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 10 ns Memory Organization: 4M x 16 Memory Interface: Parallel Packaging: 54 TSOPII/ 54 VBGA | 1,374 | |
| N/A | | M12L64164A-5TG2C | ESMT | 64Mb SDRAM | DRAM Memory | 54-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 1,178 | |
| N/A | | M12L64164A-7B(2C) | ESMT | 64Mb SDRAM Ind. | DRAM Memory | 54 TSOPII/ 54 VBGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 14 ns Memory Organization: 4M x 16 Memory Interface: Parallel Packaging: 54 TSOPII/ 54 VBGA | 845 | |
| N/A | | M12L64164A-7BG2C | ESMT | 64Mb SDRAM | DRAM Memory | 54-VBGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 990 | |
| N/A | | M12L64164A-7T(2C) | ESMT | 64Mb SDRAM Ind. | DRAM Memory | 54 TSOPII/ 54 VBGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 14 ns Memory Organization: 4M x 16 Memory Interface: Parallel Packaging: 54 TSOPII/ 54 VBGA | 113 | |
| N/A | | M12L64164A-7TG2C | ESMT | 64Mb SDRAM | DRAM Memory | 54-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 14 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 614 | |
| N/A | | M12L64322A (2S) | ESMT | 64Mb SDRAM Ind. | DRAM Memory | 86 TSOPII/ 90 BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 2M x 32 Memory Interface: Parallel Packaging: 86 TSOPII/ 90 BGA | 270 | |
| N/A | | M12L64322A-5BG2S | ESMT | 64Mb SDRAM | DRAM Memory | 90-BGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 1,827 | |
| N/A | | M12L64322A-5TG2S | ESMT | 64Mb SDRAM | DRAM Memory | 86-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 10 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 1,217 | |
| N/A | | M12L64322A-6BG2S | ESMT | 64Mb SDRAM | DRAM Memory | 90-BGA | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 12 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 774 | |
| N/A | | M12L64322A-6TG2S | ESMT | 64Mb SDRAM | DRAM Memory | 86-TSOPII | 3.0V ~ 3.6V | 0°C – 70°C | Write Cycle Time Word Page: 12 ns Memory Organization: 512K x 32 Memory Interface: Parallel | 1,209 | |