| N/A | | M53D5121632A-7.5BG | ESMT | 512Mb LPDDR SDRAM | DRAM Memory | 60-BGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 8M x 16 Memory Interface: Parallel | 1,015 | |
| N/A | | M53D5123216A-5BG | ESMT | 512Mb LPDDR SDRAM | DRAM Memory | 144-FBGA (12x12) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 32 Memory Interface: Parallel Packaging: 144-UFBGA, FCBGA | 144 | |
| N/A | | M53D5123216A-6BG | ESMT | 512Mb LPDDR SDRAM | DRAM Memory | 144-FBGA (12x12) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 32 Memory Interface: Parallel Packaging: 144-UFBGA, FCBGA | 731 | |
| N/A | | M53D5123216A-7.5BG | ESMT | 512Mb LPDDR SDRAM | DRAM Memory | 144-FBGA (12x12) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 4M x 32 Memory Interface: Parallel Packaging: 144-UFBGA, FCBGA | 697 | |
| N/A | | M53D64164A-4.5BG2C | ESMT | 64Mb LPDDR SDRAM | DRAM Memory | 60-BGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 1,524 | |
| N/A | | M53D64164A-5BG2C | ESMT | 64Mb LPDDR SDRAM | DRAM Memory | 60-BGA (8x13) | 1.7V ~ 1.95V | 0°C – 70°C | Write Cycle Time Word Page: 15 ns Memory Organization: 1M x 16 Memory Interface: Parallel | 664 | |
| N/A | | M54995P#TB0J | Renesas | IC DRIVER 8 BIT SERIAL INPUT | Drivers, Receivers, Transceivers | N/A | N/A | N/A | N/A | 419 | |
| N/A | | M54D1G1664A | ESMT | 1Gb LPDDR2 SDRAM | DRAM Memory | 134 BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 16 Memory Interface: Parallel | 1,104 | |
| N/A | | M54D1G1664A (2G) | ESMT | 1Gb LPDDR2 SDRAM | DRAM Memory | 134 BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 16 Memory Interface: Parallel | 537 | |
| N/A | | M54D1G3232A | ESMT | 1Gb LPDDR2 SDRAM | DRAM Memory | 134 BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 32 Memory Interface: Parallel | 898 | |
| N/A | | M54D1G3232A (2G) | ESMT | 1Gb LPDDR2 SDRAM | DRAM Memory | 134 BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 32 Memory Interface: Parallel | 377 | |
| N/A | | M54D2G16128A | ESMT | 2Gb LPDDR2 SDRAM | DRAM Memory | 134 Ball BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 128M x 16 Memory Interface: Parallel | 1,836 | |
| N/A | | M54D2G3264A | ESMT | 2Gb LPDDR2 SDRAM | DRAM Memory | 134 Ball BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 32 Memory Interface: Parallel | 1,379 | |
| N/A | N/A | M54D2G3264A (2C) | ESMT | 2Gb LPDDR2 SDRAM Ind. | DRAM Memory | 134 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 32 Memory Interface: Parallel | 519 | |
| N/A | N/A | M54D4G32128ZA(2C) | ESMT | 4Gb LPDDR2 SDRAM Ind. | DRAM Memory | 134 Ball BGA | 2.5V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 128M x 32 Memory Interface: Parallel | 438 | |
| N/A | | M54D5121632A | ESMT | 512Mb LPDDR2 SDRAM | DRAM Memory | 134 Ball BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 16 Memory Interface: Parallel | 1,385 | |
| N/A | | M54D5123216A | ESMT | 512Mb LPDDR2 SDRAM | DRAM Memory | 134 Ball BGA | 2.5V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 16M x 32 Memory Interface: Parallel | 630 | |
| N/A | | M55D1G1664A-CDBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 16 Memory Interface: Parallel | 276 | |
| N/A | | M55D1G1664A-CDBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 16 Memory Interface: Parallel | 512 | |
| N/A | | M55D1G1664A-EEBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 16 Memory Interface: Parallel | 263 | |