| N/A | | M55D1G1664A-EEBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 16 Memory Interface: Parallel | 1,872 | |
| N/A | | M55D1G1664A-GFBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 16 Memory Interface: Parallel | 824 | |
| N/A | | M55D1G1664A-GFBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Memory Organization: 64M x 16 Memory Interface: Parallel | 59 | |
| N/A | | M55D1G3232A-CDBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 32 Memory Interface: Parallel | 667 | |
| N/A | | M55D1G3232A-CDBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 32 Memory Interface: Parallel | 164 | |
| N/A | | M55D1G3232A-EEBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 32 Memory Interface: Parallel | 1,091 | |
| N/A | | M55D1G3232A-EEBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 32 Memory Interface: Parallel | 178 | |
| N/A | | M55D1G3232A-GFBG2Y | ESMT | 1Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 32 Memory Interface: Parallel | 530 | |
| N/A | | M55D1G3232A-GFBIG2Y | ESMT | 1Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Memory Organization: 32M x 32 Memory Interface: Parallel | 1,579 | |
| N/A | | M55D4G16256A-CDBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 256M x 16 Memory Interface: Parallel | 644 | |
| N/A | | M55D4G16256A-EEBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 256M x 16 Memory Interface: Parallel | 693 | |
| N/A | | M55D4G16256A-GFBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Memory Organization: 256M x 16 Memory Interface: Parallel | 199 | |
| N/A | | M55D4G32128A (2R) | ESMT | 4Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178 Ball BGA | 1.8V / 1.2V | -40°C – 85°C | Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Memory Organization: 128M x 32 | 716 | |
| N/A | | M55D4G32128A-CDBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 128M x 32 Memory Interface: Parallel | 31 | |
| N/A | | M55D4G32128A-CDBIG2R | ESMT | 4Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 128M x 32 Memory Interface: Parallel | 1,377 | |
| N/A | | M55D4G32128A-EEBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 128M x 32 Memory Interface: Parallel | 87 | |
| N/A | | M55D4G32128A-EEBIG2R | ESMT | 4Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Write Cycle Time Word Page: 15 ns Memory Organization: 128M x 32 Memory Interface: Parallel | 52 | |
| N/A | | M55D4G32128A-GFBG2R | ESMT | 4Gb LPDDR3 SDRAM | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -25°C – 85°C | Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Memory Organization: 128M x 32 Memory Interface: Parallel | 423 | |
| N/A | | M55D4G32128A-GFBIG2R | ESMT | 4Gb LPDDR3 SDRAM Ind. | DRAM Memory | 178-BGA (10x11.5) | 1.14V ~ 1.30V, 1.70V ~ 1.95V | -40°C – 85°C | Clock Frequency: 1.066 GHz Write Cycle Time Word Page: 15 ns Memory Organization: 128M x 32 Memory Interface: Parallel | 1,505 | |
| N/A | | M56Z4G16256A (2H) | ESMT | 4Gb LPDDR4x SDRAM Ind. | DRAM Memory | 200 Ball BGA | 1.7V ~ 1.95V | -40°C – 85°C | Clock Frequency: 2.133 GHz Write Cycle Time Word Page: 18 ns Technology: DRAM - LPDDR4X Memory Organization: 256M x 16 | 753 | |