 | N/A | MT29F256G08CJABBWP-12IT:B | Micron Technology Inc. | IC FLASH 256GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 601 | |
 | N/A | MT29F256G08CJABBWP-12IT:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 314 | |
 | N/A | MT29F256G08CKCABH2-10Z:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,237 | |
 | N/A | MT29F256G08CKCABH2-12:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,058 | |
 | N/A | MT29F256G08CKCABH2-12Z:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,761 | |
 | N/A | MT29F256G08CKCABH2-12Z:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 267 | |
 | N/A | MT29F256G08CKCDBJ5-6R:D | Micron Technology Inc. | IC FLASH 256GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 318 | |
 | N/A | MT29F256G08CKCDBJ5-6R:D TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 283 | |
 | N/A | MT29F256G08CMAAAC5:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 52VLGA | Flash Memory | 52-VLGA (18x14) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 914 | |
 | N/A | MT29F256G08CMAAAC5:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 52VLGA | Flash Memory | 52-VLGA (18x14) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 915 | |
 | N/A | MT29F256G08CMCABH2-10RZ:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 828 | |
 | N/A | MT29F256G08CMCABH2-10RZ:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 703 | |
 | N/A | MT29F256G08CMCABH2-10Z:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,275 | |
 | N/A | MT29F256G08CMCABH2-10Z:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,378 | |
 | N/A | MT29F256G08CMCABH2-12:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 442 | |
 | N/A | MT29F256G08CMCABH2-12ITZ:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 292 | |
 | N/A | MT29F256G08CMCABH2-12ITZ:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 275 | |
 | N/A | MT29F256G08CMCABJ2-10RZ:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,076 | |
 | N/A | MT29F256G08CMCABJ2-10RZ:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,136 | |
 | N/A | MT29F256G08CMCBBH2-10:B | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 66 | |