 | N/A | MT29F256G08CMCBBH2-10:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 100TBGA | Flash Memory | 100-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 488 | |
 | N/A | MT29F256G08CMCDBJ5-6R:D | Micron Technology Inc. | IC FLASH 256GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 67 | |
 | N/A | MT29F256G08CMCDBJ5-6R:D TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,003 | |
 | N/A | MT29F256G08CMCGBJ4-37R:G TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 846 | |
 | N/A | MT29F256G08CMEDBJ5-12IT:D TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 975 | |
| N/A | N/A | MT29F256G08EBCAGB16A3WC1-R | Micron Technology Inc. | IC FLASH 256GBIT PARALLEL DIE | Flash Memory | Die | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 447 | |
 | N/A | MT29F256G08EBCAGJ4-5M:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 147 | |
 | N/A | MT29F256G08EBCAGJ4-5M:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 55 | |
 | N/A | MT29F256G08EBHAFJ4-3R:A | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 698 | |
 | N/A | MT29F256G08EBHAFJ4-3R:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 94 | |
 | N/A | MT29F256G08EBHAFJ4-3RES:A TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 355 | |
 | N/A | MT29F256G08EBHBFJ4-3ITF:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,934 | |
 | N/A | MT29F256G08EECBBJ4-6:B | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 562 | |
 | N/A | MT29F256G08EECBBJ4-6:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 687 | |
 | N/A | MT29F256G08EFEBBWP-M:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 329 | |
 | N/A | MT29F256G08EFEBBWP:B TR | Micron Technology Inc. | IC FLASH 256GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,022 | |
| N/A | | MT29F32G08ABAAAM73A3WC1 | Micron Technology Inc. | IC FLASH 32GBIT PARALLEL DIE | Flash Memory | Die | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 1,381 | |
| N/A | | MT29F32G08ABAAAM73A3WC1P | Micron Technology Inc. | IC FLASH 32GBIT PARALLEL DIE | Flash Memory | Die | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 172 | |
 | | MT29F32G08ABAAAWP-IT:A | Micron Technology Inc. | IC FLASH 32GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: N/A | 1,560 | |
 | | MT29F32G08ABAAAWP-IT:A TR | Micron Technology Inc. | IC FLASH 32GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Write Cycle Time Word Page: N/A | 376 | |