 | N/A | MT29F512G08CECBBJ4-5M:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,022 | |
 | N/A | MT29F512G08CEHBBJ4-3R:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 725 | |
 | N/A | MT29F512G08CEHBBJ4-3R:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 798 | |
 | N/A | MT29F512G08CFCBBWP-10:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,665 | |
 | N/A | MT29F512G08CFCBBWP-10:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 347 | |
 | N/A | MT29F512G08CFCBBWP-10ES:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,072 | |
 | N/A | MT29F512G08CFCBBWP-10M:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 48TSOP I | Flash Memory | 48-TSOP I | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Packaging: 48-TFSOP (0.724", 18.40mm Width) Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 209 | |
 | N/A | MT29F512G08CKCABH7-6:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 352 | |
 | N/A | MT29F512G08CKCABH7-6:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,340 | |
 | N/A | MT29F512G08CKCABH7-6R:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 489 | |
| N/A | N/A | MT29F512G08CKCABK7-6:A | Micron Technology Inc. | IC FLASH 512GBIT PARALLEL 166MHZ | Flash Memory | N/A | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 522 | |
 | N/A | MT29F512G08CKCCBH7-6R:C | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 563 | |
 | N/A | MT29F512G08CKCCBH7-6R:C TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 328 | |
 | N/A | MT29F512G08CKECBH7-12:C | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,182 | |
 | N/A | MT29F512G08CKECBH7-12:C TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 671 | |
 | N/A | MT29F512G08CMCABH7-6:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 727 | |
 | N/A | MT29F512G08CMCABH7-6:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 511 | |
 | N/A | MT29F512G08CMCABH7-6C:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 935 | |
 | N/A | MT29F512G08CMCABH7-6R:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,324 | |
 | N/A | MT29F512G08CMCBBH7-6C:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 525 | |