 | N/A | MT29F512G08CMCBBH7-6ITR:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 230 | |
 | N/A | MT29F512G08CMCBBH7-6R:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,321 | |
 | N/A | MT29F512G08CMCBBH7-6R:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 17 | |
 | N/A | MT29F512G08CMCCBH7-6ITR:C | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 498 | |
 | N/A | MT29F512G08CMCCBH7-6ITR:C TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 428 | |
 | N/A | MT29F512G08CMCCBH7-6R:C | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 378 | |
 | N/A | MT29F512G08CMCCBH7-6R:C TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,247 | |
 | N/A | MT29F512G08CMCEBJ4-37ITR:E | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,532 | |
 | N/A | MT29F512G08CMCEBJ4-37ITR:E TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 478 | |
 | N/A | MT29F512G08CMEABH7-12:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 999 | |
 | N/A | MT29F512G08CMEABH7-12:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 452 | |
 | N/A | MT29F512G08CMEABH7-12IT:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 87 | |
 | N/A | MT29F512G08CMECBH7-12:C | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 278 | |
 | N/A | MT29F512G08CMECBH7-12:C TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 152TBGA | Flash Memory | 152-TBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,889 | |
 | N/A | MT29F512G08CUAAAC5:A | Micron Technology Inc. | IC FLASH 512GBIT PARALLEL 52VLGA | Flash Memory | 52-VLGA (18x14) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,641 | |
 | N/A | MT29F512G08CUCABH3-10:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 752 | |
 | N/A | MT29F512G08CUCABH3-10:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 273 | |
 | N/A | MT29F512G08CUCABH3-10ITZ:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 516 | |
 | N/A | MT29F512G08CUCABH3-10ITZ:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,337 | |
 | N/A | MT29F512G08CUCABH3-10R:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 100LBGA | Flash Memory | 100-LBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 691 | |