 | N/A | MT29F512G08EBHBFJ4-R:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 810 | |
 | N/A | MT29F512G08EBHBFJ4-R:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 539 | |
 | N/A | MT29F512G08EBHBFJ4-T:B | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 896 | |
 | N/A | MT29F512G08EBHBFJ4-T:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 804 | |
 | N/A | MT29F512G08EBLCEJ4-R:C | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.6V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 780 | |
 | N/A | MT29F512G08EBLCEJ4-R:C TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.6V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 559 | |
| N/A | N/A | MT29F512G08EBLEEB47R3WC1-M | Micron Technology Inc. | IC FLASH 512GBIT DIE | Flash Memory | Die | N/A | N/A | Memory Organization: 64G x 8 Write Cycle Time Word Page: N/A | 672 | |
| N/A | N/A | MT29F512G08EBLEEB47R3WC1-R | Micron Technology Inc. | IC FLASH 512GBIT DIE | Flash Memory | Die | N/A | N/A | Memory Organization: 64G x 8 Write Cycle Time Word Page: N/A | 1,002 | |
 | N/A | MT29F512G08EBLEEJ4-R:E | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.6V ~ 3.6V | 0°C ~ 70°C | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,482 | |
 | N/A | MT29F512G08EBLEEJ4-R:E TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.6V ~ 3.6V | 0°C ~ 70°C | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 52 | |
 | N/A | MT29F512G08EBLEEJ4-T:E | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.6V ~ 3.6V | 0°C ~ 70°C | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,139 | |
 | N/A | MT29F512G08EBLEEJ4-T:E TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.6V ~ 3.6V | 0°C ~ 70°C | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 286 | |
 | N/A | MT29F512G08EECAGJ4-5M:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 204 | |
 | N/A | MT29F512G08EEHAFJ4-3R:A | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 341 | |
 | N/A | MT29F512G08EEHAFJ4-3R:A TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132VBGA | Flash Memory | 132-VBGA (12x18) | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,330 | |
 | N/A | MT29F512G08EMCBBJ5-10ES:B TR | Micron Technology Inc. | IC FLASH 512GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 72 | |
 | N/A | MT29F512G08EMCBBJ5-6:B.001 | Micron Technology Inc. | IC FLASH 512GBIT PAR 132TBGA | Flash Memory | 132-TBGA (12x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 492 | |
 | N/A | MT29F64G08ABCBBH6-6:B TR | Micron Technology Inc. | IC FLASH 64GBIT PARALLEL 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8G x 8 Write Cycle Time Word Page: N/A | 9 | |
 | N/A | MT29F64G08ABCBBH6-6IT:B | Micron Technology Inc. | IC FLASH 64GBIT PARALLEL 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8G x 8 Write Cycle Time Word Page: N/A | 34 | |
 | N/A | MT29F64G08ABCBBH6-6IT:B TR | Micron Technology Inc. | IC FLASH 64GBIT PARALLEL 152VBGA | Flash Memory | 152-VBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8G x 8 Write Cycle Time Word Page: N/A | 932 | |