 | | MT46V64M8TG-6T IT:D TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 880 | |
 | N/A | MT46V64M8TG-6T IT:F TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,157 | |
 | | MT46V64M8TG-6T L:F | Micron Technology Inc. | IC DRAM 512MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 810 | |
 | | MT46V64M8TG-6T L:F TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 759 | |
 | | MT46V64M8TG-6T:D TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 551 | |
 | | MT46V64M8TG-6T:F TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 764 | |
 | N/A | MT46V64M8TG-75 IT:D | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,995 | |
 | N/A | MT46V64M8TG-75 IT:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 389 | |
 | | MT46V64M8TG-75 L:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 326 | |
 | N/A | MT46V64M8TG-75:D | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 991 | |
 | N/A | MT46V64M8TG-75:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,605 | |
 | N/A | MT46V64M8TG-75E:D | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 709 | |
 | N/A | MT46V64M8TG-75E:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 898 | |
 | N/A | MT46V64M8TG-75Z:D | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,453 | |
 | N/A | MT46V64M8TG-75Z:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 5 | |
 | | MT46V8M16P-5B:D TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.5V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 522 | |
 | | MT46V8M16P-6T:D TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 487 | |
 | | MT46V8M16P-6TIT:DTR | Micron Technology Inc. | IC DRAM 128MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,337 | |
 | | MT46V8M16P-75:D | Micron Technology Inc. | IC DRAM 128MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 906 | |
 | | MT46V8M16P-75:D TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 66TSOP | DRAM Memory | 66-TSOP | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,580 | |