 | | MT47H32M16BN-25E IT:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (10x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 470 | |
 | | MT47H32M16BN-25E:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (10x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 869 | |
 | | MT47H32M16BN-3 IT:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (10x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 494 | |
 | | MT47H32M16BN-3:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (10x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 188 | |
 | | MT47H32M16BN-37E IT:D TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 84FBGA | DRAM Memory | 84-FBGA (10x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 147 | |
 | | MT47H32M16BN-37E:D TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 84FBGA | DRAM Memory | 84-FBGA (10x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,080 | |
 | | MT47H32M16BN-5E IT:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (10x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,556 | |
 | | MT47H32M16BN-5E:D TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (10x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,592 | |
 | | MT47H32M16BT-37E:A TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 92FBGA | DRAM Memory | 92-FBGA (11x19) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 24 | |
 | | MT47H32M16CC-3:B | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (12x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 694 | |
 | | MT47H32M16CC-3:B TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (12x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 419 | |
 | | MT47H32M16CC-37E IT:B | Micron Technology Inc. | IC DRAM 512MBIT PAR 84FBGA | DRAM Memory | 84-FBGA (12x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 904 | |
 | | MT47H32M16CC-37E IT:B TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 84FBGA | DRAM Memory | 84-FBGA (12x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 572 | |
 | | MT47H32M16CC-37E L:B | Micron Technology Inc. | IC DRAM 512MBIT PAR 84FBGA | DRAM Memory | 84-FBGA (12x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,146 | |
 | | MT47H32M16CC-37E L:B TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 84FBGA | DRAM Memory | 84-FBGA (12x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 138 | |
 | | MT47H32M16CC-37E:B | Micron Technology Inc. | IC DRAM 512MBIT PAR 84FBGA | DRAM Memory | 84-FBGA (12x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,086 | |
 | | MT47H32M16CC-37E:B TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 84FBGA | DRAM Memory | 84-FBGA (12x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 96 | |
 | | MT47H32M16CC-3E:B | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (12x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 865 | |
 | | MT47H32M16CC-3E:B TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (12x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 987 | |
 | | MT47H32M16CC-5E IT:B | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (12x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,870 | |