 | | MT47H32M16CC-5E IT:B TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (12x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 246 | |
 | | MT47H32M16CC-5E L:B | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (12x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 969 | |
 | | MT47H32M16CC-5E L:B TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (12x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 782 | |
 | | MT47H32M16CC-5E:B | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (12x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,133 | |
 | | MT47H32M16CC-5E:B TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (12x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 529 | |
 | | MT47H32M16HR-187E:G | Micron Technology Inc. | IC DRAM 512MBIT PAR 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,126 | |
| N/A | | MT47H32M16HR-187E:G TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,253 | |
 | | MT47H32M16HR-25E AAT:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 830 | |
| N/A | | MT47H32M16HR-25E AAT:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 105°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 879 | |
 | | MT47H32M16HR-25E AIT:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 706 | |
| N/A | | MT47H32M16HR-25E AIT:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 784 | |
 | | MT47H32M16HR-25E IT:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 326 | |
 | | MT47H32M16HR-25E IT:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 920 | |
 | | MT47H32M16HR-25E L:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,055 | |
| N/A | | MT47H32M16HR-25E L:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 888 | |
 | | MT47H32M16HR-25E:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 539 | |
| N/A | | MT47H32M16HR-25E:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 575 | |
 | | MT47H32M16HR-3:F | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,190 | |
| N/A | | MT47H32M16HR-3:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 327 | |
| N/A | | MT47H32M16HR-3:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 84FBGA | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 606 | |