 | | MT47H64M8CB-5E:B | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 945 | |
 | | MT47H64M8CB-5E:B TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 65 | |
 | | MT47H64M8CF-25E AIT:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 487 | |
| N/A | | MT47H64M8CF-25E AIT:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 378 | |
 | | MT47H64M8CF-25E IT:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 223 | |
 | | MT47H64M8CF-25E IT:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 298 | |
 | | MT47H64M8CF-25E L:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 356 | |
| N/A | | MT47H64M8CF-25E L:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 69 | |
 | | MT47H64M8CF-25E:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 416 | |
 | | MT47H64M8CF-25E:G TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 3 | |
 | | MT47H64M8JN-25E IT:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,120 | |
 | | MT47H64M8JN-25E:G | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 367 | |
 | N/A | MT47H64M8SH-187E:H TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 293 | |
 | | MT47H64M8SH-25E AAT:H | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 1,640 | |
 | | MT47H64M8SH-25E AAT:H TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 277 | |
 | | MT47H64M8SH-25E AIT:H | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 40 | |
 | | MT47H64M8SH-25E AIT:H TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 205 | |
 | | MT47H64M8SH-25E IT:H | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 281 | |
 | N/A | MT47H64M8SH-25E IT:H TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 84 | |
 | | MT47H64M8SH-25E:H | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 886 | |