 | | MT47H64M8SH-25E:H TR | Micron Technology Inc. | IC DRAM 512MBIT PARALLEL 60FBGA | DRAM Memory | 60-FBGA (8x10) | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Grade: Commercial (Extended) Memory Interface: Parallel Memory Organization: 64M x 8 Write Cycle Time Word Page: 15 ns | 130 | |
 | | MT48LC128M4A2P-75:C | Micron Technology Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 128M x 4 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 31 | |
 | | MT48LC128M4A2TG-75:C TR | Micron Technology Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 128M x 4 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 307 | |
 | | MT48LC16M16A2B4-6A AAT:G | Micron Technology Inc. | IC DRAM 256MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 12 ns | 676 | |
 | | MT48LC16M16A2B4-6A AAT:G TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 12 ns | 1,350 | |
 | | MT48LC16M16A2B4-6A AIT:G | Micron Technology Inc. | IC DRAM 256MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 12 ns | 91 | |
 | | MT48LC16M16A2B4-6A AIT:G TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 12 ns | 301 | |
 | | MT48LC16M16A2B4-6A XIT:G | Micron Technology Inc. | IC DRAM 256MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 12 ns | 469 | |
 | | MT48LC16M16A2B4-6A XIT:G TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 12 ns | 753 | |
 | | MT48LC16M16A2B4-7E:G | Micron Technology Inc. | IC DRAM 256MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 14 ns | 555 | |
 | | MT48LC16M16A2B4-7E:G TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 14 ns | 1,187 | |
 | | MT48LC16M16A2BG-75 IT:D | Micron Technology Inc. | IC DRAM 256MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x14) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,309 | |
 | | MT48LC16M16A2BG-75 IT:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x14) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,049 | |
 | | MT48LC16M16A2BG-75:D | Micron Technology Inc. | IC DRAM 256MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x14) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 738 | |
 | | MT48LC16M16A2BG-75:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x14) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 15 ns | 1,375 | |
| N/A | | MT48LC16M16A2BG-7E IT:D | Micron Technology Inc. | IC DRAM 256MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x14) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 14 ns | 1,040 | |
 | | MT48LC16M16A2BG-7E:D | Micron Technology Inc. | IC DRAM 256MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x14) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 14 ns | 1,962 | |
 | | MT48LC16M16A2BG-7E:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x14) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 14 ns | 188 | |
 | | MT48LC16M16A2F4-6A:G | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 14 ns | 25 | |
 | | MT48LC16M16A2F4-6A:GTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54VFBGA | DRAM Memory | 54-VFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 14 ns | 1,217 | |