 | | MT48LC16M16A2TG-7E L:D | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 1,055 | |
 | | MT48LC16M16A2TG-7E L:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 282 | |
 | | MT48LC16M16A2TG-7E:D TR | Micron Technology Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 576 | |
| N/A | N/A | MT48LC16M16A2Y66AWC1 | Micron Technology Inc. | IC DRAM 256MBIT PARALLEL 133MHZ | DRAM Memory | Die | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 16 Write Cycle Time Word Page: 14 ns | 1,724 | |
 | | MT48LC16M4A2P-75:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 4 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 84 | |
 | | MT48LC16M4A2P-7E:G | Micron Technology Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 4 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 777 | |
| N/A | | MT48LC16M8A2BB-6A AAT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Write Cycle Time Word Page: 12 ns | 1,340 | |
| N/A | | MT48LC16M8A2BB-6A AAT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Write Cycle Time Word Page: 12 ns | 721 | |
| N/A | | MT48LC16M8A2BB-6A AIT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 60TFBGA | DRAM Memory | 60-TFBGA (8x16) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Write Cycle Time Word Page: 12 ns | 1,168 | |
| N/A | | MT48LC16M8A2BB-6A AIT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Write Cycle Time Word Page: 12 ns | 409 | |
| N/A | | MT48LC16M8A2BB-6A:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Write Cycle Time Word Page: 12 ns | 225 | |
| N/A | | MT48LC16M8A2BB-6A:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Write Cycle Time Word Page: 12 ns | 496 | |
 | | MT48LC16M8A2BB-75 IT:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Write Cycle Time Word Page: 15 ns | 1,809 | |
 | | MT48LC16M8A2BB-75:G | Micron Technology Inc. | IC DRAM 128MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Write Cycle Time Word Page: 15 ns | 985 | |
 | | MT48LC16M8A2BB-7E:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Write Cycle Time Word Page: 14 ns | 476 | |
 | | MT48LC16M8A2FB-75 IT:G TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 60FBGA | DRAM Memory | 60-FBGA (8x16) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Write Cycle Time Word Page: 15 ns | 785 | |
 | | MT48LC16M8A2P-6A AIT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 129 | |
 | | MT48LC16M8A2P-6A AIT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,108 | |
 | | MT48LC16M8A2P-6A IT:L | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,156 | |
 | | MT48LC16M8A2P-6A IT:L TR | Micron Technology Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 16M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 295 | |